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STMicroelectronics High Voltage N-Channel Power MOSFET 29 A, 600 V, 7-Pin HU3PAK STHU36N60DM6AG
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Model | STHU36N60DM6AG |
| Mount Type | Surface |
| Series | STHU36N |
| Maximum Operating Temperature | 150°C |
| Package Type | HU3PAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 7 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 29A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 99mΩ |
| Maximum Power Dissipation Pd | 210W |
| Typical Gate Charge Qg @ Vgs | 46nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.6V |
Key Features
- The device supports a maximum continuous drain current of 29 A.
- It operates at a maximum drain-source voltage of 600 V.
- The package type is 7-Pin HU3PAK surface mount.
- Low gate charge and input capacitance enable efficient switching performance.
- It features a maximum power dissipation of 210 W for reliable thermal handling.
- Designed with a fast recovery body diode and low RDS(on) per area for improved efficiency.
- Operating temperature ranges from -55°C to 150°C ensuring robust industrial use.
- AEC-Q101 qualified, suitable for automotive applications.
Product Description
STMicroelectronics STHU36N60DM6AG is a high voltage N-channel power MOSFET with a maximum continuous drain current of 29 A and maximum drain-source voltage of 600 V. Packaged in a 7-Pin HU3PAK surface mount, this device is engineered for high-efficiency bridge topologies and zero-voltage switching (ZVS) phase-shift converters. It leverages the MDmesh DM6 fast recovery diode technology, offering very low recovery charge and time, along with improved RDS(on) per area compared to previous generations.
The MOSFET features low gate charge (46 nC) and forward voltage of 1.6 V, which improve switching performance and efficiency. Thermal management is supported by a maximum power dissipation rating of 210 W. Operating temperature range of -55°C to 150°C ensures reliable performance in harsh environments.
This model is AEC-Q101 qualified, making it suitable for demanding automotive applications. The device is also 100% avalanche tested, guaranteeing robustness under transient conditions.
Key features include a fast recovery body diode, low gate charge, and optimized RDS(on) per area to enhance switching efficiency. It is surface mount type with a pin count of 7 pins, catering to compact PCB designs.
Applications for the STMicroelectronics STHU36N60DM6AG comprise industrial power conversion, motor drives, automotive electronics, and other high voltage switching circuits. Maximum continuous drain current: 29 A. Maximum drain-source voltage: 600 V.
Package type: 7-Pin HU3PAK surface mount. Low gate charge of 46 nC for efficient switching. Maximum power dissipation of 210 W for thermal reliability. AEC-Q101 automotive standard qualified. Temperature range: -55°C to 150°C operating.
100% avalanche tested for durability. Explore more semiconductor components and Power MOSFETs at EnvMart to find the precise solutions for your high-efficiency, high-voltage electronic applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 29 A.
It operates at a maximum drain-source voltage of 600 V.
This device is packaged in a 7-Pin HU3PAK surface mount configuration.
The operating temperature range for this model is from -55°C to 150°C.
The typical gate charge is 46 nC, which contributes to its efficient switching performance.
It features a maximum power dissipation rating of 210 W, ensuring reliable thermal handling.
Yes, it is AEC-Q101 qualified, making it suitable for demanding automotive applications.
The forward voltage for this MOSFET is 1.6 V.
It leverages MDmesh DM6 fast recovery diode technology for improved efficiency.
This model has a pin count of 7 pins, suitable for compact PCB designs.
The maximum gate-source voltage is 25 V.
The maximum drain-source resistance is 99 mΩ, contributing to its efficiency.
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