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Infineon Type N-Channel IGBT Module 50 A 1200 V 23-Pin Chassis Mount FP50R12N2T7B11BPSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.3mm |
| Length | 107.5mm |
| Model | FP50R12N2T7B11BPSA1 |
| Width | 45mm |
| Mount Type | Chassis |
| Series | FP50R12N2T7_B11 |
| Maximum Operating Temperature | 175°C |
| Package Type | Module |
| Minimum Operating Temperature | -40°C |
| Pin Count | 23 |
| Maximum Continuous Collector Current Ic | 50A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V |
| Channel Type | Type N |
| Maximum Power Dissipation Pd | 20mW |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Number of Transistors | 7 |
Key Features
- The module features 7 transistors integrated in a chassis mount package.
- Maximum power dissipation of 20 mW ensures efficient thermal management.
- Equipped with a press-fit contact technology for optimal connection.
- Operating temperature range from -40°C to 175°C supports harsh industrial environments.
- 23-pin configuration provides ease of integration in power control applications.
- Built with TRENCHSTOP IGBT7 and emitter controlled diodes for superior performance.
- Ideal for auxiliary inverters, motor drives, and servo drives in industrial and automotive systems.
Product Description
Infineon FP50R12N2T7B11BPSA1 Type N-Channel IGBT Module is engineered for efficient power switching and control with a maximum continuous collector current of 50 A and a collector emitter voltage of 1200 V. This 23-pin chassis mount module supports high power density applications leveraging the TRENCHSTOP IGBT7 technology combined with an emitter controlled diode design and NTC for temperature sensing.
The module integrates 7 transistors in a robust package with a copper base plate for optimized heat dissipation. Designed to handle maximum power dissipation up to 20 mW, it ensures longevity and stability in demanding electrical and industrial environments.
This IGBT Module operates reliably in extreme temperature conditions, ranging from -40°C to 175°C, making it suitable for industrial automation, motor drives, servo systems, and auxiliary inverter applications. The press-fit contact technology further enhances connectivity and installation ease.
The module’s chassis mount design offers sturdy mechanical integration. The 23-pin layout facilitates versatile usage in complex electronic circuits. Equipped with integrated brake chopper and rectifier functions, reducing system costs.
RoHS compliant ensuring environmental safety and regulatory adherence. Optimized for applications requiring high switching frequency and efficient power management.
This module is a critical component in modern semiconductor-based power electronics used in industrial automation and automotive power control systems. Its advanced semiconductor design leads to significant improvements in reliability and efficiency.
Explore EnvMart’s extensive range of semiconductor modules to find complementary components for your electronic designs.
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Frequently Asked Questions
The maximum continuous collector current for this module is 50 A.
This IGBT module has a collector emitter voltage rating of 1200 V.
The operating temperature range for this model is from -40°C to 175°C.
The module integrates 7 transistors in its design.
The dimensions of this module are 107.5 mm in length, 45 mm in width, and 21.3 mm in height.
This model utilizes a chassis mount type for installation.
The maximum power dissipation for this IGBT module is 20 mW.
This module features a 23-pin configuration for ease of integration.
It is built with TRENCHSTOP IGBT7 technology and emitter controlled diodes for enhanced performance.
Yes, the module is RoHS compliant, ensuring environmental safety and regulatory adherence.
It is suitable for applications such as auxiliary inverters, motor drives, and servo drives in industrial and automotive systems.
The maximum gate emitter voltage for this IGBT module is 20 V.
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