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Infineon N-Channel IGBT Single Transistor IC 30A 1200V 3-Pin TO-247 Through Hole IHW15N120E1XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.21mm |
| Length | 42mm |
| Model | IHW15N120E1XKSA1 |
| Width | 16.13mm |
| Mount Type | Through Hole |
| Series | Resonant Soft-Switching |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC for target applications |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 30A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V |
| Channel Type | Type N |
| Maximum Power Dissipation Pd | 156W |
| Maximum Gate Emitter Voltage VGEO | 25 V |
Key Features
- This device features a TO-247 package with through-hole mounting suitable for robust power circuit designs.
- It delivers a maximum power dissipation of 156W, ensuring efficient thermal handling.
- The transistor has 3 pins and is suitable for resonant soft-switching series applications.
- Operating temperature range extends from -40°C to 150°C, suitable for industrial environments.
- Maximum gate-emitter voltage rating is 25V, providing reliable gate drive conditions.
- The maximum collector-emitter saturation voltage VceSAT is 1.5V, optimized for low conduction losses.
- Conforms to JEDEC standards for target applications, ensuring quality and reliability.
- The device incorporates a monolithic body diode with low forward voltage, designed for soft commutation with high ruggedness and temperature stability.
Product Description
Infineon IHW15N120E1XKSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) single transistor IC designed for power switching applications in industrial, automotive, and manufacturing sectors. The transistor supports a maximum continuous collector current of 30 amps and can withstand collector-emitter voltages up to 1200 volts, making it suitable for medium to high-power applications.
Encased in a robust TO-247 package with through-hole mounting, this device provides excellent thermal management and mechanical stability. Its monolithic body diode has a low forward voltage optimized for soft commutation, granting high ruggedness and temperature stability essential for harsh operating conditions.
The IHW15N120E1XKSA1 transistor operates reliably from -40°C to 150°C and features a maximum power dissipation of 156 watts, suitable for demanding electrical loads. The maximum gate-emitter voltage is rated at 25 volts, and the maximum collector-emitter saturation voltage is a low 1.5 volts, enabling efficient switching performance and low conduction losses.
Dimensions of 42mm in length, 16.13mm in width, and 5.21mm in height ensure compatibility with standard power assemblies and simplify integration. Compliant with JEDEC standards for target applications, this transistor meets relevant quality and reliability certifications.
Applications include power inverters, motor drives, HVAC systems, and industrial power control modules. The transistor is widely used in commercial and industrial electronic circuits requiring efficient, rugged, and durable switching elements.
TO-247 package with through-hole mounting for reliable mechanical connection. Maximum continuous collector current of 30A for high-power switching. High voltage rating of 1200V collector-emitter voltage. Optimized monolithic body diode for soft commutation and low forward voltage.
Wide operating temperature range from -40°C to 150°C for industrial use. Low saturation voltage of 1.5V reduces conduction losses. Complies with JEDEC standards ensuring device quality and consistency. Dimensions suitable for standard power electronic modules.
Discover a broad range of semiconductor devices and electronic components in the Infineon product line on EnvMart for industrial, HVAC, manufacturing, and automotive applications.
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Frequently Asked Questions
The maximum continuous collector current for this IGBT is 30A.
This model can withstand a maximum collector-emitter voltage of 1200V.
It has a maximum power dissipation capacity of 156W, ensuring efficient thermal handling.
The operating temperature range extends from -40°C to 150°C, making it suitable for industrial environments.
The device is encased in a TO-247 package with through-hole mounting, suitable for robust power circuit designs.
The maximum gate-emitter voltage rating is 25V, providing reliable gate drive conditions.
The maximum collector-emitter saturation voltage (VceSAT) is 1.5V, optimized for low conduction losses.
The dimensions of this model are 42mm in length, 16.13mm in width, and 5.21mm in height.
It is suitable for applications such as power inverters, motor drives, HVAC systems, and industrial power control modules.
It incorporates a monolithic body diode with low forward voltage, designed for soft commutation and high ruggedness.
This IGBT conforms to JEDEC standards for target applications, ensuring quality and reliability.
The IHW15N120E1XKSA1 has 3 pins.
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