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Nexperia Type N-Channel Power MOSFET, 5.5 A, 55 V, Enhancement Mode, 4-Pin SOT-223 BUK98150-55A/CUF

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Nexperia Type N-Channel Power MOSFET, 5.5 A, 55 V, Enhancement Mode, 4-Pin SOT-223 BUK98150-55A/CUF

Name: Nexperia Type N-Channel Power MOSFET, 5.5 A, 55 V, Enhancement Mode, 4-Pin SOT-223 BUK98150-55A/CUF
Brand: Nexperia
SKU: 111039
Price: 0.43 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	0.3mm
Length	6.7mm
Model	BUK98150-55A/CUF
Width	3.7mm
Mount Type	Surface
Series	BUK98150
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Pin Count	4
Automotive Standard	AEC-Q101
Channel Type	Type N
Maximum Continuous Drain Current Id	5.5A
Maximum Drain Source Voltage Vds	55V
Maximum Drain Source Resistance Rds	161mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	8W
Typical Gate Charge Qg @ Vgs	5.3nC
Maximum Gate Source Voltage Vgs	15V

Key Features

Features enhancement mode channel operation for efficient switching.
Utilizes TrenchMOS technology for low conduction losses and low on-state resistance.
Rated for maximum power dissipation of 8 W.
Operational temperature range from -55°C to 150°C.
Complies with AEC-Q101 automotive standard, ensuring reliability.
Maximum gate-source voltage of 15 V supports robust gate control.
Typical gate charge of 5.3 nC at Vgs, enabling fast switching.
Suitable for industrial, automotive, and power management applications.

Product Description

Nexperia BUK98150-55A/CUF is a high-performance Type N-Channel Power MOSFET designed using advanced TrenchMOS technology, providing low conduction losses through minimal on-state resistance. It is packaged in a compact 4-pin SOT-223 surface-mount package, making it ideal for modern electronic circuits requiring efficient power switching.

This MOSFET supports a maximum continuous drain current of 5.5 A and can withstand a maximum drain-source voltage of 55 V. It offers reliable operation over a wide temperature range, from -55°C minimum to a maximum of 150°C, suitable for demanding industrial and automotive environments.

The device features an enhancement mode channel and a low typical gate charge of 5.3 nC at a gate voltage of 15 V, enabling rapid switching performance while maintaining power efficiency. The maximum power dissipation rating is 8 W, ensuring robust handling of power loads typical in power management and motor control circuits.

With a length of 6.7 mm, width of 3.7 mm, and a height of 0.3 mm, the compact size allows for versatile PCB layout options and high-density assembly. It also complies with the AEC-Q101 automotive standard, guaranteeing quality and reliability for automotive applications.

Enhancement mode Type N-Channel MOSFET for efficient switching. Maximum continuous drain current: 5.5 A. Drain-source voltage rating: 55 V. Low on-state resistance for reduced conduction losses. Compact 4-pin SOT-223 package.

Operational temperature range from -55°C to 150°C. Typical gate charge: 5.3 nC at Vgs. Maximum gate-source voltage of 15 V. Power dissipation up to 8 W. AEC-Q101 compliant for automotive use.

This Nexperia Power MOSFET is suitable for diverse electronic applications including industrial power supplies, automotive power management, and general semiconductor switching tasks. It is a reliable choice for systems requiring efficient and compact power devices.

Discover more power electronic components and MOSFETs at EnvMart for all your industrial, automotive, and commercial needs.