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Nexperia Type N-Channel Enhancement MOSFET, 14 A, 30 V, 8-Pin MLPAK33 PXN5R4-30QLJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXN5R4-30QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Maximum continuous drain current rating of 14 A for robust performance.
- Maximum drain-source voltage of 30 V ensures suitability for low voltage applications.
- Compact MLPAK33 surface-mount package with 8 pins for space-saving PCB layouts.
- Low drain-source resistance of 13.6 milliohms to minimize conduction losses.
- Enhanced trench MOSFET technology with logic-level compatibility.
- Wide operating temperature range from -55°C to 150°C for harsh environments.
- Maximum power dissipation rating of 12.5 W supports efficient thermal management.
- Maximum gate-source voltage of 20 V provides safe control signal tolerance.
Product Description
Nexperia PXN5R4-30QLJ Type N-Channel MOSFET features an 8-pin MLPAK33 surface-mounted package implementing trench enhancement mode technology. It supports a continuous drain current of 14 A and withstands a maximum drain-source voltage of 30 V, making it suitable for efficient power switching and amplification tasks.
This device exhibits a low on-resistance of 13.6 milliohms and dissipates up to 12.5 W power, emphasizing efficient conduction and thermal performance. The MOSFET operates reliably in extreme temperatures from -55°C to 150°C, making it ideal for industrial, automotive, and consumer electronics applications requiring ruggedness and durability.
The logic-level compatibility enhances ease of integration with standard control circuits, while the surface mount MLPAK33 package allows compact design and automated PCB assembly workflows. Additionally, the device tolerates gate-source voltages up to 20 V, ensuring safe operational margins.
Maximum continuous drain current rating of 14 A supports moderate power loads. Maximum drain-source voltage of 30 V suitable for low to medium voltage circuits. Compact MLPAK33 package with 8 pins for efficient space utilization.
Low on-resistance reduces conduction losses and improves efficiency. Enhancement mode enables ease of switching in power control applications. Wide operating temperature range for demanding environments. Supports automated surface mount assembly processes.
Robust power dissipation capability assists in thermal management. Logic-level drive compatible for versatile electronics integration. Ideal for use in industrial, electronic, automotive, and power management systems. Explore more semiconductor components and power electronics at EnvMart to find the best fit for your design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 14 A, making it suitable for moderate power loads.
It can withstand a maximum drain-source voltage of 30 V, suitable for low to medium voltage circuits.
This MOSFET comes in a compact MLPAK33 surface-mount package with 8 pins, allowing for efficient space utilization on PCBs.
The device has a low on-resistance of 13.6 milliohms, which helps minimize conduction losses and improve efficiency.
The maximum power dissipation rating for this model is 12.5 W, which supports efficient thermal management during operation.
It operates reliably within a wide temperature range from -55°C to 150°C, suitable for harsh environments.
Yes, it features logic-level compatibility, enhancing ease of integration with standard control circuits.
The maximum gate-source voltage is 20 V, providing safe operational margins for control signals.
This model features a Type N channel, which is characteristic of enhancement mode MOSFETs.
It is ideal for use in industrial, automotive, and consumer electronics applications requiring robust performance.
The country of origin for this MOSFET is India.
The surface mount design allows for compact layouts and supports automated PCB assembly processes, enhancing manufacturing efficiency.
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