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Nexperia General Purpose PNP Transistor BC856S,115 3-Pin SOT-363 -100mA -65V 300mW AEC-Q101

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model BC856S,115
Width 1.35mm
Mount Type Surface
Series BC856S
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -65V
Minimum DC Current Gain hFE 110
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -100mA
Maximum Transition Frequency ft 100MHz
ROHM UMT1NTN Transistor, -150 mA PNP, -50 V, 6-Pin UMTBrand ROHM

Key Features

  • Maximum DC collector current of -100 mA ensures efficient small-signal amplification.
  • Maximum collector-emitter voltage of -65 V supports medium voltage circuits.
  • Surface mount SOT-363 package with compact dimensions of 2.2 mm length, 1.35 mm width, and 1.1 mm height.
  • Low maximum power dissipation of 300 mW suits low power electronic devices.
  • Compatible with automotive standards with AEC-Q101 certification.
  • High minimum DC current gain hFE of 110 for dependable transistor switching and amplification.
  • Operates reliably from -65°C to 150°C, ideal for harsh environments.
  • Low collector capacitance and collector-emitter saturation voltage improve switching speed and efficiency.

Product Description

Nexperia BC856S,115 is a general-purpose PNP bipolar transistor designed for efficient switching and amplification in electronic circuits. Housed in a compact 3-pin SOT-363 surface mount package, this transistor supports a maximum DC collector current of -100 mA and a collector-emitter voltage rating of -65 V. It dissipates up to 300 mW of power and operates across a broad temperature range from -65°C to 150°C, making it suitable for demanding industrial and automotive applications.

This transistor features low collector capacitance and saturation voltage, which enhance switching performance and reduce power losses in signal amplification. The transistor conforms to the automotive AEC-Q101 standard, verifying its suitability for automotive electronic systems.

The device's small footprint of 2.2 mm length, 1.35 mm width, and 1.1 mm height enables space-efficient designs on printed circuit boards using surface mount technology. A minimum DC current gain of 110 guarantees stable amplification and switching behavior.

Nexperia BC856S,115 is widely used in electronic, industrial, and automotive circuits for tasks such as signal processing, amplification, switching, and interfacing. Maximum DC collector current: -100 mA for reliable operation in low power circuits.

Maximum collector-emitter voltage: -65 V to withstand medium voltage conditions. Surface mount SOT-363 package facilitates compact PCB assembly. Certified to AEC-Q101 automotive standard ensuring performance under harsh conditions.

Operating temperature range from -65°C to 150°C supports diverse environments. Low collector capacitance and saturation voltage enhance device switching efficiency. Minimum current gain hFE of 110 ensures consistent transistor performance.

Maximum transition frequency of 100 MHz suitable for high-speed switching. Pin count: 3 pins compatible with SMD mounting. Ideal for usage in automotive, industrial, and electronic equipment requiring PNP transistors. Explore EnvMart for a comprehensive selection of semiconductor devices and Bipolar Transistors for diverse industrial and electronic applications.

Nexperia General Purpose PNP Transistor BC856S,115 3-Pin SOT-363 -100mA -65V 300mW AEC-Q101
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Frequently Asked Questions

The maximum DC collector current of this model is -100 mA, ensuring efficient small-signal amplification.

The maximum collector-emitter voltage for the BC856S,115 is -65 V, suitable for medium voltage circuits.

This transistor has a maximum power dissipation of 300 mW, making it suitable for low power electronic devices.

The BC856S,115 operates reliably within a temperature range of -65°C to 150°C, ideal for harsh environments.

It is housed in a surface mount SOT-363 package, which has compact dimensions of 2.2 mm length, 1.35 mm width, and 1.1 mm height.

The minimum DC current gain (hFE) for the BC856S,115 is 110, ensuring stable amplification and switching behavior.

Yes, it is certified to the AEC-Q101 automotive standard, verifying its suitability for automotive electronic systems.

The maximum transition frequency of the BC856S,115 is 100 MHz, making it suitable for high-speed switching applications.

This transistor features a pin count of 3 pins, compatible with SMD mounting.

The maximum emitter-base voltage (VEBO) for the BC856S,115 is -5 V.

This model is widely used in electronic, industrial, and automotive circuits for tasks such as signal processing, amplification, and switching.

The maximum collector-base voltage (VCBO) for the BC856S,115 is -80 V.

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