$1.03
$1.00
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon DirectFET Type N-Channel MOSFET, 25 A, 100 V, 3-Pin Surface Mount IRF6645TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IRF6645TRPBF |
| Mount Type | Surface |
| Series | DirectFET |
| Maximum Operating Temperature | 150°C |
| Package Type | DirectFET |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 25A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 35mΩ |
| Maximum Power Dissipation Pd | 42W |
| Typical Gate Charge Qg @ Vgs | 20nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 25 A supports efficient power switching.
- Surface mount 3-pin DirectFET package provides enhanced thermal and electrical performance.
- Maximum drain-source resistance Rds(on) of 35 mΩ for minimized conduction losses.
- Typical gate charge of 20 nC at Vgs ensures fast switching capabilities.
- Maximum power dissipation rated at 42 W for robust handling of power loads.
- Operating temperature range from -55°C to 150°C allows usage in harsh environments.
- Maximum gate-source voltage of 20 V safeguards device gate during operation.
- Forward voltage of 1.3 V optimizes conduction efficiency in synchronous rectification.
Product Description
Infineon IRF6645TRPBF is a high-performance DirectFET Type N-Channel MOSFET engineered to deliver excellent efficiency in power switching applications. Featuring a maximum continuous drain current of 25 A and a drain-source voltage of 100 V, this 3-pin surface mount device is suitable for use in industrial, automotive, and power management applications.
The MOSFET offers low on-resistance (Rds(on)) at 35 milliohms, reducing power losses during conduction and improving overall system efficiency. A typical gate charge of 20 nC at Vgs allows for rapid switching, making it ideal for synchronous rectification and other high-speed switching scenarios.
Designed with a robust power dissipation capability of 42 W, the IRF6645TRPBF maintains reliable operation across a wide temperature range from -55°C to 150°C. The device includes a maximum gate-source voltage rating of 20 V and a forward voltage of 1.3 V, further supporting ruggedness and performance stability.
The DirectFET package ensures excellent thermal performance and low inductance, enhancing its suitability for compact electronic designs where space and thermal management are critical factors.
This Power MOSFET is broadly used in industrial power supply designs, automotive electronics, motor control circuits, and other demanding electrical systems requiring high current handling and efficiency.
Maximum continuous drain current of 25 A. Drain-source voltage rating of 100 V. Low Rds(on) of 35 mΩ for reduced conduction losses. Efficient 3-pin DirectFET surface mount package. High power dissipation capability of 42 W.
Wide operational temperature range (-55°C to 150°C). Maximum gate-source voltage of 20 V. Optimized for synchronous rectification with 1.3 V forward voltage. Explore our extensive range of power semiconductors at EnvMart to find solutions tailored to your industrial and electrical design needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 25 A.
This MOSFET has a maximum drain-source voltage rating of 100 V.
The maximum drain-source resistance (Rds(on)) is 35 mΩ, which helps minimize conduction losses.
The typical gate charge at Vgs is 20 nC, allowing for fast switching capabilities.
It is rated for a maximum power dissipation of 42 W.
The operating temperature range is from -55°C to 150°C, making it suitable for harsh environments.
The maximum gate-source voltage for this device is 20 V.
The forward voltage is 1.3 V, which optimizes conduction efficiency in synchronous rectification.
This model uses a 3-pin surface mount DirectFET package.
It is suitable for industrial power supply designs, automotive electronics, and motor control circuits.
This MOSFET has a pin count of 3, and the specific dimensions are not provided in the data.
The country of origin for this MOSFET is India.
Related Products
$0.19
$0.19
-3%
New
Other Products from this brand
Recently Viewed Products
$107.69
$104.46
-3%
New
$121.68
$118.03
-3%
New
$13.35
$12.95
-3%
New
$1.03
$1.00
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent