onsemi PowerTrench Type N-Channel MOSFET, 229 A, 80 V Enhancement Mode, 7-Pin TO-263 FDB024N08BL7

onsemi FDB024N08BL7 is a PowerTrench Type N-Channel MOSFET engineered for applications requiring high current handling, low conduction losses, and efficient switching capabilities. With a maximum continuous drain current rating of 229 A and a drain-source voltage of 80 V, it is suitable for power management and control in industrial electronics.

This MOSFET is housed in a compact 7-Pin TO-263 surface mount package, facilitating integration into dense circuit boards while ensuring effective thermal management through its power dissipation capacity of 246 W.

The enhancement mode channel type ensures that the device remains off at zero gate-source voltage, providing control stability in switching applications. With a low max on-resistance of 2.4 mOhm, it offers minimized power loss and improved efficiency.

Typical gate charge of 137 nC at a gate-source voltage of 10 V allows for faster switching and reduced gate drive power requirements, while the voltage rating of 20 V protects the gate from overvoltage damage.

The device is rated for operation across a wide temperature range from -55°C to 175°C, making it well suited for demanding industrial, power supply, and automotive-adjacent environments, though no specific automotive certification is claimed.

Physical dimensions of 10.2 mm length, 9.4 mm width, and 4.7 mm height allow flexible board layout and reliable packaging compatibility. The product does not carry specific approvals but meets general industrial standards for MOSFET components.

This MOSFET is ideal for use in power conversion, motor drivers, and industrial electronic controls requiring efficient, high current, and high power semiconductor switches. The device features an enhancement mode channel.

Packaged in a 7-pin TO-263 surface mount package suitable for compact PCB layouts. Offers low on-resistance with a maximum Rds of 2.4 milliohms. Supports high power dissipation up to 246 W for robust operation. Operates reliably from -55°C to a maximum temperature of 175°C.

Typical gate charge of 137 nC at Vgs enhances switching efficiency. Maximum gate-source voltage rating of 20 V provides robust gate drive tolerance. Forward voltage is 1.3 V, optimizing conduction losses. Compact dimensions of 10.2 mm length, 9.4 mm width, and 4.7 mm height.

Compliance with standard industrial use; no specific automotive or approval certifications. Explore the extensive selection of semiconductor components and Power MOSFETs at EnvMart for high-reliability industrial and electronic manufacturing applications.