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Vishay N-Channel MOSFET 39.3 A 60 V Enhancement 4-Pin SO-8 SiJ462ADP-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 6.25mm |
| Length | 5.25mm |
| Model | SiJ462ADP-T1-GE3 |
| Width | 1.14mm |
| Mount Type | Surface |
| Series | SiJ462ADP |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 39.3A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 7.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 22.3W |
| Typical Gate Charge Qg @ Vgs | 30nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Type N-channel enhancement mode MOSFET designed for efficient switching.
- Maximum continuous drain current of 39.3 amperes at 25°C.
- Capable of withstanding up to 60 volts drain-to-source voltage.
- Low typical gate charge of 30 nC reduces switching losses.
- Maximum drain-source resistance of 7.2 milliohms ensures low conduction losses.
- Surface mount with SO-8 package ensures easy PCB integration.
- Maximum power dissipation rated at 22.3 watts for reliable operation.
- Wide operating temperature range from -55°C to 150°C for harsh environments.
Product Description
Vishay SiJ462ADP-T1-GE3 is a high-performance N-Channel power MOSFET optimized for low power loss and high efficiency in switching applications. It features a 39.3 A maximum continuous drain current and 60 V maximum drain-source voltage in a space-saving 4-Pin SO-8 surface mount package.
Designed using TrenchFET Gen IV technology, this MOSFET offers an exceptionally low gate charge (Qg) of 30 nC and minimal drain-source resistance (Rds(on)) of 7.2 mΩ, enabling reduced conduction and switching losses for enhanced overall system efficiency.
The device operates reliably over an extended temperature range from -55°C to +150°C, making it suitable for demanding industrial, automotive (non-automotive certified), and consumer electronics applications requiring robust performance.
The Vishay SiJ462ADP-T1-GE3 MOSFET supports a maximum gate-source voltage of ±20 V and power dissipation up to 22.3 W, providing excellent thermal management and operational stability.
This compact SO-8 package with dimensions 5.25 mm (length) x 1.14 mm (width) x 6.25 mm (height) facilitates high-density PCB designs and mechanical resilience with flexible leads that help reduce mechanical stress.
Type N-channel enhancement mode MOSFET for efficient switching. Maximum continuous drain current: 39.3 A at 25°C. Drain-source voltage rating: 60 V. Low gate charge of 30 nC at Vgs. Drain-source on-resistance: 7.2 mΩ typical.
Power dissipation rating: 22.3 W. Operating temperature range: -55°C to +150°C. Maximum gate-source voltage ±20 V. Package type: 4-pin SO-8 surface mount. Compact device dimensions for high-density layouts.
This MOSFET is ideal for power management in industrial, computing, consumer electronics, and other applications requiring efficient low-voltage switching devices. Explore the Vishay semiconductor range on EnvMart for reliable and high-quality electronic components.
Explore more products in our Discrete Semiconductor category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 39.3 A at 25°C.
It has a maximum drain-source voltage rating of 60 V.
The typical gate charge is 30 nC at Vgs.
The typical drain-source on-resistance is 7.2 mΩ.
The maximum power dissipation is rated at 22.3 W.
It operates reliably over an extended temperature range from -55°C to +150°C.
This model comes in a 4-pin SO-8 surface mount package.
The dimensions are 5.25 mm in length, 1.14 mm in width, and 6.25 mm in height.
The maximum gate-source voltage is ±20 V.
It features an N-channel enhancement mode.
This model is suitable for power management in industrial, computing, consumer electronics, and other applications requiring efficient low-voltage switching devices.
The country of origin for this device is India.
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