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Nexperia High Voltage PNP Bipolar Transistor PBHV9040T,215 -250 mA, -400 V, 3-Pin SOT-23 PBHV9040T,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model PBHV9040T,215
Width 1.4mm
Mount Type Surface
Series PBHV9040T
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -400V
Minimum DC Current Gain hFE 100
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -500V
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -250mA
Transistor Configuration Single
Maximum Transition Frequency ft 55MHz

Key Features

  • This transistor is housed in a compact 3-pin SOT-23 surface mount package.
  • Features a single transistor configuration with PNP polarity.
  • Maximum power dissipation is 300 mW allowing moderate power handling.
  • Built to operate in a wide temperature range from -55°C to 150°C.
  • Minimum DC current gain (hFE) of 100 ensures effective amplification.
  • Designed for use in high voltage circuits requiring up to -500 V collector base voltage tolerance.
  • Maximum transition frequency is 55 MHz suitable for switching and amplification.

Product Description

The Nexperia PBHV9040T,215 is a high voltage PNP bipolar transistor optimized for reliable performance in demanding electronic switching and amplification applications. This transistor supports a maximum DC collector current of -250 mA and a collector emitter voltage of -400 V, making it suitable for high voltage circuits in industrial and electronic equipment.

Packaged in a compact 3-pin SOT-23 surface mount form factor, the PBHV9040T,215 offers ease of integration into automated assembly processes and dense circuit boards.

This single transistor configuration features PNP polarity, supporting negative polarity high voltage operations with robust tolerance to collector base voltage up to -500 V. It dissipates up to 300 mW of power, allowing it to be used in moderate power applications efficiently.

Operating temperature range spans from -55°C to 150°C, ensuring reliable operation under harsh environmental conditions common in industrial, telecommunications, automotive, and power management systems.

The transistor's minimum DC current gain of 100 offers solid gain characteristics for reliable switching and amplification tasks. Additionally, the maximum transition frequency of 55 MHz supports high-speed switching applications.

Its compact size with dimensions 3 mm length, 1.4 mm width, and 1.1 mm height supports space-saving PCB designs and lightweight electronic assemblies in industries such as consumer electronics, power supply units, and other embedded systems.

This transistor is housed in a compact 3-pin SOT-23 surface mount package. Features a single transistor configuration with PNP polarity. Maximum power dissipation is 300 mW allowing moderate power handling. Designed to operate from -55°C to 150°C for wide temperature tolerance.

Minimum DC current gain (hFE) of 100 ensures effective amplification. Maximum collector base voltage rating of -500 V for high voltage circuits. Maximum transition frequency of 55 MHz for switching and amplification speed.

Compact dimensions of 3 x 1.4 x 1.1 mm support dense PCB layouts.

This transistor is a versatile component suitable for use in industrial electronics, power management, telecommunications, automotive electronics, and other sectors requiring robust, high voltage PNP bipolar transistors. Explore more advanced semiconductor components and electronic parts in the EnvMart Bipolar Transistors category for your design and manufacturing needs.

Nexperia High Voltage PNP Bipolar Transistor PBHV9040T,215 -250 mA, -400 V, 3-Pin SOT-23 PBHV9040T,215
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this model is -400 V, allowing it to operate in high voltage circuits.

This transistor supports a maximum DC collector current of -250 mA, suitable for various applications requiring moderate current handling.

It operates within a temperature range of -55°C to 150°C, making it suitable for harsh environmental conditions.

This model is housed in a compact 3-pin SOT-23 surface mount package, facilitating easy integration into circuit designs.

The minimum DC current gain (hFE) for this transistor is 100, ensuring effective amplification in electronic applications.

The maximum power dissipation for this model is 300 mW, allowing it to handle moderate power applications effectively.

The maximum transition frequency of this transistor is 55 MHz, suitable for high-speed switching applications.

The dimensions of this model are 3 mm in length, 1.4 mm in width, and 1.1 mm in height, supporting space-saving designs.

This transistor features a single transistor configuration with PNP polarity, designed for negative polarity high voltage operations.

The maximum collector-base voltage (VCBO) rating for this model is -500 V, providing robust tolerance in high voltage circuits.

This transistor is suitable for use in industrial electronics, power management, telecommunications, and automotive electronics, among others.

The maximum emitter-base voltage (VEBO) for this model is -6 V, ensuring it operates safely within specified limits.

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