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Nexperia N-Channel MOSFET 310 mA 60 V Enhancement 3-Pin SC-70 2N7002BKW,115

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Nexperia N-Channel MOSFET 310 mA 60 V Enhancement 3-Pin SC-70 2N7002BKW,115

Name: Nexperia N-Channel MOSFET 310 mA 60 V Enhancement 3-Pin SC-70 2N7002BKW,115
Brand: Nexperia
SKU: 105810
Price: 0.07 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	Malaysia
Brand	Nexperia
Height	1mm
Length	2.2mm
Model	2N7002BKW,115
Width	1.35mm
Mount Type	Surface
Series	2N7002BKW
Maximum Operating Temperature	150°C
Package Type	SC-70
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type N
Maximum Continuous Drain Current Id	310mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	2Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	330mW
Typical Gate Charge Qg @ Vgs	0.5nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

Offers low drain-source resistance of 2 ohms ensuring efficient switching.
Supports surface mount configuration suitable for compact PCB designs.
Enables enhancement mode operation for precise control.
Maximum power dissipation of 330 mW supports medium load applications.
Wide operating temperature range from -55°C to 150°C for harsh environments.
Typical gate charge of 0.5 nC minimizes driving power consumption.
Maximum gate-source voltage of 20 V ensures robust gate control.
Compact dimensions with length 2.2 mm, width 1.35 mm and height 1 mm.

Product Description

The Nexperia 2N7002BKW,115 is a type N-channel MOSFET transistor designed for discrete semiconductor applications requiring efficient switching and low power dissipation. This device supports a maximum continuous drain current of 310 mA and can withstand drain-source voltages up to 60 V, making it suitable for medium power electronic circuits.

Packaged in a compact 3-pin SC-70 surface mount device, the transistor is ideal for space-constrained PCB layouts commonly found in industrial electronics and automotive control modules. Its enhancement mode channel operation provides precise switching capabilities.

With a maximum power dissipation of 330 mW, the MOSFET efficiently manages thermal loads in moderate current scenarios. It operates reliably over an extended temperature range from -55°C to 150°C, ensuring stable performance under demanding environmental conditions.

The gate control is optimized with a typical gate charge of 0.5 nC at specified gate-source voltage and a maximum gate-source voltage rating of 20 V, reducing the driving power required for switching and improving overall system efficiency.

The device dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height contribute to minimal footprint integration. It also meets the rigorous automotive quality standard AEC-Q101, confirming its suitability for automotive and transportation applications.

Low drain-source resistance of 2 Ω ensures minimal conduction losses. Ideal for switching, amplification, and load-driving applications in industrial and automotive sectors. Surface mount SC-70 package simplifies automated assembly processes.

Compact size supports high-density circuit designs. Wide temperature tolerance ensures dependable performance. AEC-Q101 certified for automotive-grade quality assurance.

This Nexperia MOSFET transistor is well suited for industrial electronics, automotive control systems, and discrete power management circuits. Browse the Electronics & Electricals > Semiconductor > MOSFET category on EnvMart for related components and semiconductors.