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onsemi Transistor, NPN Small Signal 100 mA 32 V 3-Pin SOT-23 BCW33LT3G

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onsemi Transistor, NPN Small Signal 100 mA 32 V 3-Pin SOT-23 BCW33LT3G

Name: onsemi Transistor, NPN Small Signal 100 mA 32 V 3-Pin SOT-23 BCW33LT3G
Brand: onsemi
SKU: 105799
Price: 0.03 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.11mm
Length	3.04mm
Model	BCW33LT3G
Width	2.64mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	32V
Minimum DC Current Gain hFE	420
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	-32V dc
Maximum Collector Base Voltage VCBO	-32V dc
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	225mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Single
Maximum Transition Frequency ft	1MHz

Key Features

Designed for surface mount PCB assembly in compact applications.
Offers maximum power dissipation of 225 mW for reliable operation.
High minimum DC current gain (hFE) of 420 for efficient amplification.
Operates within a wide temperature range from -55°C to 150°C.
Meets automotive AEC-Q101 standard for extended reliability.
Maximum transition frequency of 1 MHz suitable for low-frequency switching tasks.
Package dimensions are compact with length 3.04 mm, width 2.64 mm, height 1.11 mm.
Pin count of 3 facilitates standard transistor circuit configurations.

Product Description

onsemi BCW33LT3G is a high-quality small signal NPN transistor designed for industrial and automotive electronic circuits requiring reliable switching and amplification at low currents and voltages. It supports a maximum DC collector current of 100 mA and a collector-emitter voltage up to 32 V, making it ideal for signal-level switching applications.

This transistor features a surface mount SOT-23 package that allows for compact PCB layouts with a pin count of 3, suitable for various bipolar transistor circuit implementations. The maximum power dissipation is 225 mW, ensuring safe operation under typical loads.

The device exhibits a minimum DC current gain (hFE) of 420, contributing to efficient current amplification, and a maximum transition frequency of 1 MHz, compatible with low to moderate frequency circuits. It operates reliably across a broad temperature range from -55°C to 150°C, enhancing robustness in harsh environments.

Additionally, the BCW33LT3G meets the AEC-Q101 automotive qualification standard, making it suitable for automotive applications where stringent quality and reliability are demanded.

Typical use cases include industrial control, automotive electronics, signal processing, and general-purpose amplification or switching tasks in compact electronic devices. Designed for surface mount PCB assembly in compact applications.

Offers maximum power dissipation of 225 mW for reliable operation. High minimum DC current gain (hFE) of 420 for efficient amplification. Operates within a wide temperature range from -55°C to 150°C. Meets automotive AEC-Q101 standard for extended reliability.

Maximum transition frequency of 1 MHz suitable for low-frequency switching tasks. Package dimensions are compact with length 3.04 mm, width 2.64 mm, height 1.11 mm. Pin count of 3 facilitates standard transistor circuit configurations.

Explore additional onsemi bipolar transistor models and semiconductors at EnvMart for a wide range of industrial, automotive, laboratory, and consumer electronics applications.

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