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STMicroelectronics MDmesh SuperMESH Type N-Channel MOSFET 11 A 900 V Enhancement 3-Pin TO-247 STW12NK90Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW12NK90Z |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 880mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 230W |
| Typical Gate Charge Qg @ Vgs | 113nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- The MOSFET features an enhancement channel mode for efficient switching operation.
- It has a maximum continuous drain current of 11 A for heavy load applications.
- Maximum drain-source voltage rating is 900 V ensuring high voltage tolerance.
- Robust TO-247 package with 3 pins for reliable through-hole mounting.
- Wide operating temperature range from -55°C to 150°C suitable for harsh environments.
- Low drain-source resistance of 880 mÂΩ for reduced conduction losses.
- Typical gate charge of 113 nC at Vgs supporting fast switching capabilities.
- Maximum gate-source voltage rated at 30 V providing robust gate control.
Product Description
STMicroelectronics STW12NK90Z is a MDmesh™ SuperMESH™ Type N-Channel MOSFET designed for high efficiency power switching with a maximum continuous drain current of 11 A and a drain-source voltage of 900 V. Packaged in a robust TO-247 through-hole mount, the device suits power electronics applications requiring reliable enhancement mode switching.
This MOSFET operates efficiently within a temperature range from -55°C to 150°C, making it ideal for industrial and power management electronics in demanding conditions. The maximum power dissipation rating of 230 W allows the transistor to handle substantial load power while maintaining performance.
With a typical gate charge of 113 nC at the gate-source voltage and a maximum gate voltage of 30 V, the device offers swift switching capability, contributing to overall circuit efficiency. The low drain-source resistance of 880 mΩ minimizes conduction loss during operation.
Its physical dimensions (15.75 mm length, 5.15 mm width, and 20.15 mm height) and 3-pin TO-247 package enable practical PCB integration and mechanical stability. The forward voltage of 1.2 V is optimized to balance power dissipation and conduction efficiency.
STW12NK90Z MOSFETs are suitable for semiconductor discrete component applications in power supplies, motor control, and industrial electronics requiring enhanced thermal and electrical performance.
The MOSFET features an enhancement channel mode for efficient switching operation. Maximum continuous drain current of 11 A for heavy load applications. High maximum drain-source voltage rating of 900 V. Robust TO-247 package with 3 pins for reliable mounting.
Wide operating temperature range from -55°C to 150°C. Low drain-source resistance (880 mΩ) for reduced power loss. Typical gate charge of 113 nC supporting swift switching. Maximum gate-source voltage of 30 V for strong gate control.
Forward voltage of 1.2 V optimized for conduction efficiency. Explore more industrial and electronic components at EnvMart for your power semiconductor needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 A, suitable for heavy load applications.
This MOSFET has a maximum drain-source voltage rating of 900 V, ensuring high voltage tolerance.
It operates efficiently within a temperature range from -55°C to 150°C, making it suitable for harsh environments.
The typical gate charge at Vgs is 113 nC, which supports fast switching capabilities.
This unit is packaged in a TO-247 through-hole mount, which provides mechanical stability and reliable mounting.
The low drain-source resistance is 880 mΩ, which helps to reduce conduction losses during operation.
The maximum power dissipation rating is 230 W, allowing the transistor to handle substantial load power while maintaining performance.
The forward voltage is optimized at 1.2 V, balancing power dissipation and conduction efficiency.
This model features a 3-pin configuration, which is standard for the TO-247 package.
It utilizes an enhancement-type N-channel, designed for efficient switching operation.
The maximum gate-source voltage is rated at 30 V, providing robust gate control.
This MOSFET belongs to the MDmesh and SuperMESH series, designed for high efficiency power switching applications.
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