STMicroelectronics MDmesh Type N-Channel MOSFET, 4 A Continuous Drain Current, 1500 V Drain Source Voltage STP4N150

STMicroelectronics STP4N150 MDmesh Type N-Channel Enhancement Mode MOSFET is engineered for power electronics applications requiring a high voltage rating of 1500 V and a continuous drain current of up to 4 A. Featuring a TO-220 package with 3 pins, it offers robust performance for switching and amplification in industrial, commercial, and electronic equipment.

This transistor technology leverages STMicroelectronics' MDmesh design for low on-resistance and enhanced switching characteristics, contributing to efficient power management and reduced thermal losses.

Its maximum power dissipation of 160 W and operating temperature range from -55°C to 150°C permits reliable use in harsh environments and demanding applications. The through-hole mounting format allows easy integration into printed circuit boards for maintenance or prototyping.

Key electrical parameters include a maximum drain-source resistance of 7 Ω, gate-source voltage tolerance of up to 30 V, forward voltage drop of 2 V, and a typical gate charge of 30 nC, enabling fast and efficient switching suitable for power supply circuits, motor control, and load switching.

Dimensionally, the device measures 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width, facilitating compact system design without compromising heat dissipation. This MOSFET features MDmesh technology enhancing switching efficiency and robustness.

It supports maximum power dissipation of 160 W under optimal conditions. Designed for through-hole mounting and has a 3-pin configuration. Operates within a temperature range of -55°C to 150°C for industrial reliability.

The device has a low maximum drain-source resistance of 7 Ω for efficient conduction. Maximum gate-source voltage rating is 30 V ensuring safe gate control. Typical gate charge is 30 nC, allowing fast switching performance.

The transistor supports a forward voltage drop of 2 V under load. Compact dimensions of approximately 15.75 mm height, 10.4 mm length, and 4.6 mm width enable space-saving design. Ideal for use in industrial electronics, power supplies, consumer electronic circuits, and any applications requiring efficient, high-voltage transistor switching.

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