DiodesZetex Type N-Channel Vertical DMOS FET TO-92 Package 320mA, 100V Enhancement ZVNL110A

DiodesZetex ZVNL110A is a Type N-Channel Vertical DMOS Field Effect Transistor (FET) designed for power management and switching applications. It supports a maximum continuous drain current of 320mA and a maximum drain-source voltage of 100V, making it suitable for low power electronics and semiconductor circuits requiring efficient switching capabilities.

This device uses enhancement mode channel operation, ensuring it remains off at zero gate voltage, which is ideal for switching applications. The low maximum drain-source resistance (Rds) of 3 ohms reduces power loss and improves conduction efficiency. The device is mounted in a compact TO-92 3-pin through-hole package, facilitating easy manual or automated PCB assembly.

Key electrical characteristics include a maximum power dissipation rating of 700mW and a forward voltage of 1.2V, which supports efficient performance within safe limits. Its robust thermal tolerance allows operation from -55°C up to 150°C, making it reliable under diverse environmental conditions.

The ZVNL110A is broadly applicable across industrial electronics, power switching, electronic component manufacturing, and hobbyist circuit building. Typical uses include power regulation, switching loads, and integration into semiconductor discrete component circuits.

Vertical DMOS transistor technology for improved switching. Through-hole TO-92 package with 3 pins for strength and ease of installation. Maximum continuous drain current: 320mA. Maximum drain-source voltage: 100V. Enhancement mode channel ensures normally-off behavior.

Maximum drain-source resistance: 3 ohms. Power dissipation capability: 700mW. Operating temperature range: -55°C to +150°C. Compact physical dimensions fit diverse PCB layouts. Suitable for industrial, laboratory, and manufacturing electronic applications.

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