onsemi Transistor, 1 A NPN, 60 V, 3-Pin TO-92 Package, Through Hole Mount KSD1616AGTA

onsemi KSD1616AGTA transistor is a high-quality small signal NPN bipolar junction transistor designed for general-purpose amplification and switching. It features a 3-pin TO-92 plastic package built for through-hole PCB mounting, combining compact size with reliable performance.

This transistor supports a maximum DC collector current of 1 ampere and a collector-emitter voltage of 60 volts, making it suitable for various low to medium power applications in industrial, electronics manufacturing, and communications equipment.

Its power dissipation rating of 750 milliwatts and minimum DC current gain of 81 ensure efficient operation with stable amplification characteristics. The device functions well within a wide operating temperature range of 0°C to 150°C, suitable for diverse environmental conditions.

The transistor's transition frequency of 160 MHz makes it a fitting choice for circuits requiring moderate high-frequency switching or amplification. Package dimensions of approximately 21.77 mm height, 5.3 mm length, and 4.19 mm width allow for compact circuit designs.

This product is manufactured in China and is delivered in new condition, ensuring quality and consistency. It is commonly used in electronics, telecommunications, industrial controls, and signal amplification tasks.

Designed for through hole mounting providing ease of PCB assembly. Supports a maximum DC collector current of 1 ampere for small signal amplification. Maximum power dissipation rating of 750 milliwatts supports moderate thermal performance.

High gain transistor with minimum DC current gain of 81 ensures amplification efficiency. Wide operating temperature range from 0°C to 150°C suitable for various environments. Compact TO-92 package with dimensions approximately 21.77 mm height, 5.3 mm length, and 4.19 mm width.

Transition frequency up to 160 MHz facilitates high-frequency applications. Single transistor configuration with NPN polarity for versatile circuit design. Maximum voltages: collector-base 120 V, emitter-base 6 V, collector-emitter 60 V.

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