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STMicroelectronics MDmesh SuperMESH Type N-Channel MOSFET 5.8A 900V Enhancement 3-Pin TO-220 STP6NK90ZFP
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.3mm |
| Length | 10.4mm |
| Model | STP6NK90ZFP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 5.8A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 46.5nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Type N-channel configuration suitable for switching applications.
- Maximum continuous drain current rating of 5.8 amperes.
- Drain-source voltage (Vds) rated at 900 volts for high voltage endurance.
- Compact TO-220 through-hole package with 3 pins for easy PCB integration.
- Enhancement mode channel operation ensures efficient performance.
- Low on-resistance of 2 ohms minimizes conduction losses.
- Maximum power dissipation of 30 watts for reliable thermal handling.
- Gate-source voltage rating up to ±30 volts for signal control flexibility.
Product Description
STMicroelectronics Model STP6NK90ZFP is a high-performance N-Channel Enhancement Mode MDmesh™ SuperMESH™ MOSFET designed for use in industrial and electronic applications requiring robust switching and power handling capability. It supports a maximum continuous drain current of 5.8A and a drain-source voltage rating of 900V. Packaged in a 3-pin TO-220 format, it is suitable for through-hole PCB mounting in power electronic circuits.
This MOSFET features a low drain-source resistance of 2 ohms, which contributes to lower conduction losses and higher efficiency in switching applications. It handles maximum power dissipation of up to 30 watts and can operate reliably within a temperature range starting from -55°C to a maximum of +150°C, making it suitable for use in harsh, industrial environments.
The device's gate-source voltage rating of ±30V enables flexible gate driving signals, while the typical gate charge of 46.5nC supports fast switching speeds, ideal for amplifier circuits, power supplies, and motor control.
Key physical dimensions include a width of 4.6 mm, height of 9.3 mm, and length of 10.4 mm. With no automotive approvals, it is primarily intended for industrial and electronic equipment applications where reliable discrete semiconductor switching components are needed.
Type N-channel configuration suitable for switching applications. Maximum continuous drain current rating of 5.8 amperes. Drain-source voltage (Vds) rated at 900 volts for high voltage endurance. Compact TO-220 through-hole package with 3 pins for easy PCB integration.
Enhancement mode channel operation ensures efficient performance. Low on-resistance of 2 ohms minimizes conduction losses. Maximum power dissipation of 30 watts for reliable thermal handling. Gate-source voltage rating up to ±30 volts for signal control flexibility.
Operating temperature range from -55°C up to +150°C for harsh environments. Typical gate charge of 46.5 nanocoulombs allows fast switching.
This MOSFET is suitable for applications in industrial power management, switching power supplies, manufacturing automation, motor control circuits, and other commercial electronic devices requiring robust discrete switching components. Browsing more components from STMicroelectronics or exploring the Semiconductor > MOSFET category may provide additional options for your design needs.
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Frequently Asked Questions
The maximum continuous drain current rating for this model is 5.8 amperes.
This MOSFET has a drain-source voltage (Vds) rating of 900 volts.
It is packaged in a compact TO-220 format, suitable for through-hole mounting.
The maximum power dissipation for this MOSFET is 30 watts.
The typical gate charge is 46.5 nanocoulombs.
It operates reliably within a temperature range from -55°C to +150°C.
The MOSFET features a low on-resistance of 2 ohms.
The gate-source voltage rating is up to ±30 volts.
The dimensions are 4.6 mm in width, 9.3 mm in height, and 10.4 mm in length.
It has a Type N-channel configuration, suitable for switching applications.
This MOSFET is suitable for applications in industrial power management, switching power supplies, and motor control circuits.
The country of origin for this model is India.
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