STMicroelectronics MDmesh SuperMESH Type N-Channel MOSFET 3.5 A, 1 kV, 3-Pin TO-220 STP5NK100Z

STMicroelectronics STP5NK100Z is an MDmesh™ SuperMESH™ Type N-Channel MOSFET designed for power switching applications. With a maximum continuous drain current of 3.5 A and a maximum drain-source voltage rating of 1 kV, this device provides reliable performance for industrial and electronic applications requiring robust high-voltage switching capability.

The device uses enhancement mode channel technology combined with STMicroelectronics' MDmesh™ SuperMESH™ architecture, which optimizes conduction losses and switching speeds. Its typical gate charge of 42 nC at gate-source voltage and low on-resistance help improve efficiency in power conversion and motor control systems.

Housed in a 3-pin TO-220 package with through-hole mount, it offers easy integration into various circuit designs. Its maximum power dissipation of 125 W and wide operating temperature range from -55°C to 150°C make it suitable for demanding environments including industrial systems, power supplies, and motor drivers.

The MOSFET features a maximum gate-source voltage of 30 V and a forward voltage drop of 1.6 V, providing safe and low-loss switching operations. Its compact dimensions (10.4 mm length, 4.6 mm width, and 9.15 mm height) enable efficient board layout in dense electronic assemblies.

Typical applications include industrial power control, automotive electronic systems requiring power MOSFETs, motor control, and switching regulators. This transistor does not carry automotive standards certification but complies with standard semiconductor quality.

This MOSFET offers a maximum continuous drain current of 3.5 A for reliable operation. Designed with enhancement mode and Type N channel for efficient switching. Maximum drain-source voltage of 1 kV enables high voltage applications.

Typical gate charge is 42 nC at Vgs, allowing fast switching performance. Maximum power dissipation of 125 W supports high thermal loads. Package type TO-220 ensures easy through-hole mounting. Operating temperature ranges from -55°C to 150°C, suitable for harsh environments.

Maximum gate-source voltage of 30 V protects the MOSFET against overvoltage. Forward voltage of 1.6 V minimizes conduction losses. Compact dimensions: Length 10.4 mm, Width 4.6 mm, Height 9.15 mm. Explore the Semiconductor and MOSFET sections at EnvMart for a wide selection of high-quality power transistors and components from trusted brands including STMicroelectronics.