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onsemi Transistor NPN 100 mA 50 V 3-Pin Surface Mount SC-70 MUN5211T1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 1mm
Length 2.2mm
Model MUN5211T1G
Width 1.35mm
Mount Type Surface
Series MUN5211
Maximum Operating Temperature 150°C
Package Type SC-70
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 310mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Nexperia Digital Transistor, 100 mA NPN, 50 V, 3-Pin UMTBrand Nexperia
onsemi MUN5211T1G Transistor, 100 mA NPN, 50 V, 3-Pin SC-70Brand onsemi

Key Features

  • Designed with integrated monolithic bias resistors to reduce external components.
  • Maximum power dissipation is 310 milliwatts for efficient thermal management.
  • Surface mount device with 3 pins for easy PCB assembly.
  • Operating temperature up to 150°C for high reliability under stress.
  • Minimum DC current gain (hFE) of 35 ensures adequate amplification.
  • Meets AEC-Q101 automotive standard ensuring durability and performance in automotive use.
  • Pb-Free, halogen free, and environmentally compliant packaging.

Product Description

onsemi MUN5211T1G is a bipolar NPN transistor with a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 50 V, housed in a 3-pin SC-70 surface mount package. It integrates monolithic bias resistors within the transistor, streamlining circuit design by reducing the need for external bias resistors. This reduces board space and simplifies assembly.

The device offers a maximum power dissipation of 310 mW and is rated for operation up to 150°C, ensuring reliability in demanding industrial and automotive environments. The minimum DC current gain (hFE) is 35, providing sufficient amplification for switching and signal applications.

Its ultra-compact size with length 2.2 mm, width 1.35 mm, and height 1 mm enables use in densely packed circuit boards, especially suitable for modern electronics where miniaturization is critical.

Conforming to the AEC-Q101 automotive standard, this transistor is suited for automotive applications requiring high quality and reliability. The product is RoHS compliant, Pb-Free, and free of halogens and brominated flame retardants, supporting eco-friendly manufacturing practices.

This transistor is ideal for industrial, automotive, consumer electronics, and general purpose amplification or switching applications within semiconductor discrete device portfolios.

Designed with integrated monolithic bias resistors to reduce external components. Maximum power dissipation is 310 milliwatts for efficient thermal management. Surface mount device with 3 pins for easy PCB assembly. Operating temperature up to 150°C for high reliability under stress.

Minimum DC current gain (hFE) of 35 ensures adequate amplification. Compact dimensions: length 2.2 mm, width 1.35 mm, height 1 mm suitable for space-constrained applications. Meets AEC-Q101 automotive standard ensuring durability and performance in automotive use.

Pb-Free, halogen free, and environmentally compliant packaging. Explore our comprehensive selection of Bipolar Transistors at EnvMart for your electronic component needs.

onsemi Transistor NPN 100 mA 50 V 3-Pin Surface Mount SC-70 MUN5211T1G
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Frequently Asked Questions

The maximum DC collector current for the MUN5211T1G transistor is 100 mA.

This model has a maximum collector-emitter voltage rating of 50 V.

The maximum power dissipation for the MUN5211T1G is 310 mW.

The dimensions of this transistor are 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

It is rated for operation at temperatures up to 150°C.

The minimum DC current gain (hFE) is 35.

The MUN5211T1G is housed in a 3-pin SC-70 surface mount package.

Yes, it meets the AEC-Q101 automotive standard, ensuring reliability in automotive applications.

This model has a single transistor configuration.

Yes, it is designed with integrated monolithic bias resistors to reduce the need for external components.

It is RoHS compliant, Pb-Free, and free of halogens and brominated flame retardants.

This transistor is suitable for industrial, automotive, consumer electronics, and general-purpose amplification or switching applications.

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