Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

onsemi Transistor, 5 A NPN Bipolar, 450 V Collector Emitter, 75 W Power Dissipation, TO-220 Package MJF18004G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 29.85mm
Length 10.63mm
Model MJF18004G
Width 4.9mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 450V
Minimum DC Current Gain hFE 6
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 9V
Maximum Collector Base Voltage VCBO 1000V
Maximum Power Dissipation Pd 75W
Maximum DC Collector Current Idc 5A
Transistor Configuration Single
Maximum Transition Frequency ft 13MHz
NPN isolated transistor,MJF18004 5ABrand ON Semiconductor

Key Features

  • Maximum DC collector current of 5 A ensures robust current capability.
  • Collector emitter voltage rating of 450 V supports high voltage applications.
  • Power dissipation maximum of 75 W allows handling significant power loads.
  • TTL compatible NPN transistor configuration for diverse circuit requirements.
  • Designed with a through-hole mount type in TO-220 package for easy PCB integration.
  • Pin count of 3 supports standard transistor connections.
  • Wide operating temperature range from -65°C to 150°C enables reliable performance.
  • Maximum transition frequency of 13 MHz suitable for moderate frequency circuits.

Product Description

onsemi MJF18004G is a high performance NPN bipolar transistor designed for power amplification and switching applications. It supports a maximum DC collector current of 5 amperes and a collector emitter voltage of up to 450 volts. Packaged in a TO-220 three-pin through-hole mount, it is ideal for integration into power electronics circuits.

This transistor delivers a maximum power dissipation of 75 watts, enabling it to operate effectively in demanding electrical environments. The device features a minimum DC current gain (hFE) of 6 and a maximum transition frequency of 13 MHz, making it suitable for applications requiring moderate frequency response.

With a wide temperature operating range from -65°C to 150°C, the MJF18004G ensures stable performance across harsh industrial and commercial environments. Its collector base voltage rating of 1000 volts and emitter base voltage maximum of 9 volts provide robust voltage endurance, essential for protecting the circuit components.

The single configuration NPN transistor with 3 pins is designed for through-hole mounting on printed circuit boards, easing installation and replacement tasks. Its compact dimensions - length 10.63 mm, width 4.9 mm, and height 29.85 mm - allow it to fit into constrained spaces while delivering powerful performance.

This transistor is widely used in industrial power supplies, motor control circuits, and amplification systems within electronics manufacturing, HVAC controls, and commercial electrical equipment. It is a reliable component choice for engineers designing robust electronic devices requiring efficient power management.

Maximum DC collector current of 5 A ensures robust current capability. Collector emitter voltage rating of 450 V supports high voltage applications. Power dissipation maximum of 75 W allows handling significant power loads.

TTL compatible NPN transistor configuration for diverse circuit requirements. Designed with a through-hole mount type in TO-220 package for easy PCB integration. Pin count of 3 supports standard transistor connections. Wide operating temperature range from -65°C to 150°C enables reliable performance.

Maximum transition frequency of 13 MHz suitable for moderate frequency circuits. Minimum DC current gain (hFE) of 6 provides suitable gain for switching and amplification. Collector base voltage maximum of 1000 V for enhanced voltage tolerance.

The MJF18004G transistor is essential for assembling reliable and efficient power electronics in industrial and commercial applications. Browse the Semiconductor category at EnvMart for more components from onsemi and other leading brands.

Explore more products in our Bipolar Transistors category.

onsemi Transistor, 5 A NPN Bipolar, 450 V Collector Emitter, 75 W Power Dissipation, TO-220 Package MJF18004G
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum DC collector current of this model is 5 A, ensuring robust current capability for various applications.

This transistor has a collector emitter voltage rating of 450 V, making it suitable for high voltage applications.

The maximum power dissipation for the MJF18004G is 75 W, allowing it to manage significant power loads effectively.

It operates within a wide temperature range from -65°C to 150°C, ensuring reliable performance in various environments.

The maximum transition frequency is 13 MHz, making it suitable for moderate frequency circuits.

This model is designed for through-hole mounting in a TO-220 package, facilitating easy integration into printed circuit boards.

The transistor features a pin count of 3, supporting standard transistor connections.

The minimum DC current gain (hFE) is 6, providing suitable gain for switching and amplification applications.

This transistor has a maximum collector base voltage rating of 1000 V, which enhances its voltage tolerance.

It is widely used in industrial power supplies, motor control circuits, and amplification systems within electronics manufacturing and HVAC controls.

The maximum emitter base voltage for this transistor is 9 V, ensuring it can withstand significant voltage levels.

The country of origin for this model is India.

Related Products

$1.58
$1.53 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$1.58
$1.53
Tax included