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STMicroelectronics SCT Type N-Channel MOSFET, 60A, 1200V, Enhancement, 3-Pin Hip-247 SCTW60N120G2
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 5mm |
| Length | 34.8mm |
| Model | SCTW60N120G2 |
| Width | 15.6mm |
| Mount Type | Through Hole |
| Series | SCT |
| Maximum Operating Temperature | 200°C |
| Package Type | Hip-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | UL |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 1200V |
| Maximum Drain Source Resistance Rds | 73mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 389W |
| Typical Gate Charge Qg @ Vgs | 94nC |
| Maximum Gate Source Voltage Vgs | 18V |
| Forward Voltage Vf | 3V |
Key Features
- High-performance Type N enhancement mode MOSFET suitable for demanding power applications.
- Designed for fast switching and robust intrinsic body diode operation.
- Low gate charge (94nC at Vgs) minimizes losses and improves efficiency.
- Maximum drain-source resistance of 73mΩ and power dissipation rating of 389W.
- Operates reliably across a wide temperature range from -55°C to 200°C.
- Supplied in a 3-pin Hip-247 package, ideal for through-hole mounting.
- AEC-Q101 automotive standard compliant, suitable for industrial motor control and DC-DC converters.
Product Description
STMicroelectronics SCTW60N120G2 is a silicon carbide Power MOSFET employing advanced second-generation SiC MOSFET technology. This N-Channel enhancement mode device provides a maximum continuous drain current of 60A and withstands a maximum drain source voltage of 1200V, making it excellent for high-power industrial applications.
Featuring a remarkably low on-resistance of 73mΩ and a maximum power dissipation rating of 389W, the SCTW60N120G2 ensures efficient switching performance and minimal energy loss, even at elevated junction temperatures. Its typical gate charge of 94nC (at Vgs) and extremely low input capacitance contribute to its fast response and robustness.
High drain current (60A) and voltage capability (1200V) for demanding power systems. Enhanced switching efficiency with very fast and robust intrinsic body diode. Reliable operation from -55°C up to 200°C for industrial environments.
Supplied as a 3-pin Hip-247 package, suitable for through-hole installation on PCBs. Complies with AEC-Q101 automotive standards for reliability and quality. Wide application range including switching mode power supplies, DC-DC converters, and motor control systems.
This device is ideally suited for industrial, automotive, and power conversion applications where efficiency and thermal robustness matter. Its UL approval and quality construction ensure safe integration into critical systems.
Dimensions are 34.8mm in length, 15.6mm in width, and 5mm in height. Channel type is N and mode is enhancement, offering versatile electrical performance for modern electronic designs.
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Frequently Asked Questions
The maximum continuous drain current for the SCTW60N120G2 is 60A.
This model can withstand a maximum drain-source voltage of 1200V.
The typical gate charge at Vgs for this MOSFET is 94nC.
The maximum power dissipation rating of the SCTW60N120G2 is 389W.
The dimensions of this MOSFET are 34.8mm in length, 15.6mm in width, and 5mm in height.
It operates reliably across a temperature range from -55°C to 200°C.
This model is supplied in a 3-pin Hip-247 package, suitable for through-hole mounting.
Yes, it complies with AEC-Q101 automotive standards.
The maximum drain-source resistance is 73mΩ.
This MOSFET is suitable for applications such as industrial motor control and DC-DC converters.
The maximum gate-source voltage for the SCTW60N120G2 is 18V.
The forward voltage for this model is 3V.
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