ROHM P-Channel MOSFET RTR020P02, 2A, 20V, Enhancement Mode, 3-Pin TSMT, RQ5C020TPTL

The ROHM RQ5C020TPTL is a P-Channel MOSFET designed to deliver high performance in power switching and electronic control applications. This transistor features a maximum continuous drain current of 2A and a 20V drain-source voltage, making it suitable for demanding loads in power regulation and management tasks. Its enhancement mode operation allows for straightforward circuit integration and efficient switching behavior.

Packaged in a 3-pin TSMT form factor, this MOSFET is ideal for surface-mount applications, ensuring a compact footprint for densely populated PCB layouts. The device offers a low drain-source resistance of 250mΩ, minimizing energy losses and providing improved efficiency in operation. With a maximum power dissipation of 1W, it maintains heat management under typical operating conditions.

The gate charge Qg at Vgs of 4.9nC enhances switching speeds, contributing to responsive and reliable circuit performance. The transistor can withstand a maximum gate-source voltage of 12V, offering flexibility for integration with a variety of driver circuits. The negative forward voltage value, Vf -1.2V, improves control and stability during switching events.

An operating temperature range up to 150°C ensures the RQ5C020TPTL can be used in industrial, automotive, and commercial environments where thermal demands are high. Its surface mounting facilitates advanced automation and efficient assembly in large-scale manufacturing.

Typical applications include DC-DC converters, motor drivers, load switches, and level shifters in electronic, industrial, and instrumentation systems. Designers benefit from its combination of robust physical characteristics and reliable electrical parameters, making it well-suited for power management and interface circuits in modern electronics.

P-Channel MOSFET offering 2A maximum continuous drain current. Operates with 20V maximum drain-source voltage for reliable performance. TSMT surface-mount package with compact 3-pin configuration. Enhancement mode transistor suitable for efficient power switching.

Low drain-source resistance of 250mΩ for reduced power loss and improved efficiency. Maximum power dissipation of 1W, supporting heat management in circuit designs. Typical gate charge Qg of 4.9nC at Vgs for fast switching capability.

Supports maximum gate-source voltage of 12V for flexible circuit compatibility. Negative forward voltage Vf of -1.2V for improved switching control. Operating temperature up to 150°C for robust use in industrial and electronics applications.

Explore the full range of ROHM MOSFETs and discrete semiconductors in the Electronics & Electricals catalog for PCB, industrial control, and commercial applications.