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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.27mm |
| Length | 10.29mm |
| Model | BYW80-200G |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 8A |
| Peak Reverse Repetitive Voltage Vrrm | 200V |
| Diode Configuration | Single |
| Rectifier Type | Switching |
| Peak Reverse Current Ir | 10μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 1.25V |
| Peak Reverse Recovery Time trr | 35ns |
| Infineon Silicon Diode, Single, 7.5 A, 2-Pin 650 V TO-220 IDV15E65D2XKSA1Brand | Infineon |
The onsemi BYW80-200G is a high-performance switching diode designed for demanding electronic and power circuit applications. Featuring a peak reverse repetitive voltage of 200 V and a maximum continuous forward current of 8 A, this diode is suitable for tasks including rectification, signal demodulation, and switching in industrial, power supply, and electronic equipment.
Its single diode configuration, coupled with a TO-220 package type, ensures robust performance and facilitates secure installation. The TO-220 package is favored in power electronic assemblies for its excellent heat dissipation properties and mechanical flexibility, making the diode an ideal choice for through-hole PCB mounting where high reliability is a priority.
Key electrical features include a peak reverse current of just 10 μA, minimizing unwanted leakage and increasing circuit efficiency. The maximum forward voltage drop of 1.25 V is optimized for efficient operation, and the diode’s fast peak reverse recovery time of 35 ns enhances its performance in fast-switching environments such as switch-mode power supplies (SMPS), converters, and high-frequency rectifier circuits.
With a peak non-repetitive forward surge current capacity of 100 A, the BYW80-200G protects itself and downstream components during brief overload conditions or circuit surges. Its wide operating temperature range from -65°C to 175°C enables reliable function in extreme industrial and laboratory environments. Mechanical dimensions - 10.29 mm length, 4.82 mm width, 9.27 mm height - allow for optimized layout within compact assemblies.
Industrial sectors - including manufacturing, laboratory instrumentation, power conversion, and commercial electronics - can leverage this switching diode for high-speed switching, low leakage, and robust thermal performance. It integrates seamlessly into discrete semiconductor designs, power rectification modules, and protection circuits.
Provides robust switching performance with 200 V reverse voltage and 8 A continuous current. Single diode configuration ensures versatile rectification or switching utility. Fast 35 ns recovery supports high-frequency circuits.
TO-220 package enables reliable heat dissipation and easy PCB mounting. Minimized leakage and surge protection enhance operational safety. Wide operational temperature range suits industrial and laboratory environments. Explore more from onsemi and Schottky Diode categories on EnvMart for advanced semiconductor solutions for industrial, laboratory, and commercial electronics applications.
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