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onsemi Small Signal NPN Transistor 3 A 25 V Surface Mount SOT-223 Package FZT649

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.8mm
Length 6.7mm
Model FZT649
Width 7.3mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223 (SC-73)
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 25V
Minimum DC Current Gain hFE 70
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 35V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 3A
Transistor Configuration Single
Maximum Transition Frequency ft 150MHz
onsemi NSV40301MZ4G NPN Transistor, 3 A, 40 V, 3 + Tab-Pin SOT-223Brand ON Semiconductor

Key Features

  • Maximum DC collector current of 3 amperes for medium power applications.
  • Maximum collector-emitter voltage of 25 volts ensuring moderate voltage handling.
  • Surface mount SOT-223 package allows efficient heat dissipation and compact PCB layout.
  • High gain transistor with minimum current gain (hFE) of 70.
  • Operating temperature range from -55°C up to 150°C for robust industrial use.
  • Maximum power dissipation rating of 2 watts for safe thermal operation.
  • Maximum transition frequency of 150 MHz suitable for high frequency switching.
  • Single transistor configuration with NPN polarity optimized for amplification and switching.

Product Description

The onsemi FZT649 is a small signal NPN bipolar transistor designed to handle up to 3 A of collector current and a maximum collector-emitter voltage of 25 V. Packaged in a SOT-223 (SC-73) surface mount package, this transistor provides efficient thermal management and compact footprint ideal for modern electronics.

Boasting a minimum DC current gain (hFE) of 70 and a maximum transition frequency (ft) of 150 MHz, the FZT649 is well-suited for switching and amplification tasks across a range of industrial and commercial electronic circuits. Its operating temperature range from -55°C to 150°C ensures performance reliability under demanding environmental conditions.

This transistor’s maximum power dissipation is rated at 2 watts, allowing for safe operation within power-regulated designs. The NPN transistor features three pins arranged to easily interface with conventional PCB layouts.

Typical applications of the onsemi FZT649 include general purpose medium power amplification in industrial control circuits, power supply regulation, driver stages, and switching in telecommunication devices. Its robust specifications make it suitable for harsh operating environments found in manufacturing, industrial automation, and electronic instrumentation.

Maximum DC collector current of 3 A for reliable medium power handling. Maximum collector-emitter voltage rating of 25 V ensures stable switching performance. 3-pin SOT-223 surface mount package for compact design and efficient heat dissipation.

Broad operating temperature range from -55°C to 150°C suitable for industrial conditions. High current gain with minimum hFE of 70 for amplifier efficiency. Maximum switching speed with ft up to 150 MHz supports high-frequency circuits.

Maximum power dissipation of 2 W to ensure thermal stability. Compact package dimensions of 6.7 mm length, 7.3 mm width, and 1.8 mm height. Ideal for industrial, electronic manufacturing, and telecommunication applications.

Explore more components within the Bipolar Transistors category at EnvMart for your electronic design and manufacturing projects.

onsemi Small Signal NPN Transistor 3 A 25 V Surface Mount SOT-223 Package FZT649
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Frequently Asked Questions

The maximum DC collector current for the FZT649 is 3 amperes, suitable for medium power applications.

This transistor has a maximum collector-emitter voltage rating of 25 volts, ensuring stable switching performance.

The FZT649 is packaged in a SOT-223 (SC-73) surface mount package, which allows for efficient heat dissipation and compact PCB layout.

The minimum DC current gain (hFE) of the FZT649 is 70, which enhances its efficiency in amplification tasks.

The operating temperature range for this model is from -55°C to 150°C, making it suitable for robust industrial use.

The maximum power dissipation rating for this transistor is 2 watts, allowing for safe thermal operation.

The maximum transition frequency of this model is 150 MHz, suitable for high-frequency switching applications.

The FZT649 has a 3-pin configuration, which allows for easy interfacing with conventional PCB layouts.

The height of the FZT649 is 1.8 mm, contributing to its compact design.

Typical applications for this model include medium power amplification in industrial control circuits, power supply regulation, and driver stages in telecommunication devices.

The width of the FZT649 is 7.3 mm and the length is 6.7 mm, making it suitable for compact designs.

The maximum emitter-base voltage (VEBO) for this transistor is 5 volts.

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