Nexperia N-Channel MOSFET, 100 A, 60 V Enhancement Type, 3-Pin TO-263 Package PSMN4R6-60BS,118

Nexperia PSMN4R6-60BS,118 is a high quality N-Channel enhancement mode MOSFET designed to handle maximum continuous drain current of 100 A and maximum drain-source voltage of 60 V. The device comes in a compact and reliable 3-pin TO-263 surface mount package enabling easy integration into power electronic circuits.

This MOSFET features a low on-resistance of 7 mOhm, ensuring efficient conduction and reduced power losses in demanding applications requiring high current capability. A typical gate charge of 70.8 nC allows for fast switching performance, fitting applications where speed and efficiency matter.

It supports operation across a broad temperature range from -55°C to 175°C, making it suitable for industrial, automotive, and power supply environments requiring robustness and reliability. The device has a maximum gate-source voltage rating of -20 to +20 V to protect the MOSFET from voltage spikes.

The physical dimensions of the package are 10.3 mm in length, 11 mm in width, and 4.5 mm in height, allowing it to fit suitably in compact power module designs. Produced in the Philippines, this component meets strict manufacturing standards for quality and performance.

Industrial applications include power conversion, motor control, switch mode power supplies, and high current electronic loads. Its surface mount design allows efficient PCB layout and thermal management.

This MOSFET supports high current and voltage for power circuits. The low Rds(on) value improves energy efficiency. The small footprint supports compact device designs. Wide temperature range enhances application versatility.

Robust gate voltage ratings improve device durability. Explore the broader range of discrete semiconductors and MOSFETs on EnvMart for complementary power solutions and electronic components from trusted brands.

Explore more products in our Power MOSFET category.