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Nexperia N-Channel MOSFET, 120 A, 80 V Enhancement Mode, 3-Pin TO-220 Package PSMN3R5-80PS,127
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | Nexperia |
| Height | 16mm |
| Length | 10.3mm |
| Model | PSMN3R5-80PS,127 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 5.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 338W |
| Typical Gate Charge Qg @ Vgs | 139nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports a maximum continuous drain current of 120 amperes.
- Maximum drain-source voltage is rated at 80 volts.
- Features a low drain-source resistance of 5.8 milliohms for efficient conduction.
- Enhancement mode channel operation ensures reliable switching performance.
- Capable of dissipating up to 338 watts of power under continuous operation.
- Wide operating temperature range from -55°C to 175°C for versatility.
- Maximum gate-source voltage tolerance of -20 to +20 volts.
- Compact dimensions with 16 mm height, 10.3 mm length, and 4.7 mm width.
Product Description
Nexperia PSMN3R5-80PS,127 is a high-performance N-Channel MOSFET designed for power electronic switching applications. Rated for a maximum continuous drain current of 120 A and a drain-source voltage of 80 V, this device provides efficient conduction with a low Rds(on) of 5.8 mΩ in a compact 3-pin TO-220 package.
The enhancement mode transistor supports robust operation under harsh thermal conditions, with a maximum operating temperature up to 175°C and a minimum operating temperature of -55°C, making it suitable for industrial, automotive, and consumer electronics. The device tolerates gate-source voltage swings between -20 V and +20 V, enhancing its reliability in switching circuits.
With a maximum power dissipation of 338 W, the PSMN3R5-80PS,127 facilitates effective heat management in demanding applications. Its forward voltage of 1.2 V and typical gate charge of 139 nC contribute to optimized switching performance and energy efficiency.
The through-hole mounting type and the compact dimensions (16 mm height, 10.3 mm length, 4.7 mm width) allow for ease of installation in PCB designs requiring durable components with high power density.
Maximum continuous drain current of 120 A. Maximum drain-source voltage at 80 V. Low on-resistance of 5.8 mΩ for reduced power losses. Designed for enhancement mode switching operation. Power dissipation capability up to 338 W.
Wide ambient temperature range from -55°C to 175°C. Gate-source voltage rating of -20 to +20 V. Compact package dimensions and through-hole mount. Forward voltage of 1.2 V for efficient conduction. Manufactured in the Philippines with high quality standards.
This MOSFET is ideal for applications in industrial electronics, power management systems, automotive electronics, and other environments requiring reliable and efficient switching components. It delivers high current capacity combined with robust thermal and electrical performance.
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Frequently Asked Questions
The maximum continuous drain current of this model is 120 A.
This unit has a maximum drain-source voltage rating of 80 V.
It features a low drain-source resistance of 5.8 mΩ, which contributes to efficient conduction.
The maximum power dissipation capability of this model is 338 W.
This MOSFET operates within a wide temperature range from -55°C to 175°C.
It has a maximum gate-source voltage tolerance of -20 to +20 V.
The dimensions of this unit are 16 mm in height, 10.3 mm in length, and 4.7 mm in width.
This model uses a through-hole mounting type, suitable for PCB designs.
It is suitable for applications in industrial electronics, power management systems, and automotive electronics.
The typical gate charge for this device is 139 nC at Vgs.
The forward voltage of this model is 1.2 V, contributing to its efficient conduction.
This MOSFET is an N-Channel type designed for enhancement mode operation.
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