Nexperia Bipolar Transistor Dual NPN + PNP 100 mA 65 V 6-Pin SOT-363 BC846BPN,115

Nexperia BC846BPN,115 bipolar transistor is a dual NPN and PNP transistor pair designed for efficient switching and amplification in compact electronic devices. Packaged in a 6-pin SOT-363 surface mount format, this component suits modern PCB design requiring space-saving and reliable components.

With a maximum DC collector current of 100 mA and collector-emitter voltage up to 65 V, this transistor offers versatile operation across a wide range of low to medium power applications. The device’s low power dissipation of 300 mW and a high minimum DC gain (hFE) of 200 ensures optimized performance with minimal loss.

The transistor’s compact physical footprint with dimensions 2.2 mm by 2.2 mm length and width, and a height of 1.1 mm enables integration into densely populated electronic circuits. The device configuration is isolated, allowing flexible circuit topologies.

RoHS compliance guarantees an environmentally responsible manufacturing process, while the automotive AEC-Q101 standard certification verifies robustness in harsh automotive and industrial environments. The transistor maintains reliable operation within a temperature range from -55°C up to 150°C, supporting applications in diverse thermal conditions.

Featuring a transition frequency of 100 MHz, the BC846BPN,115 transistor is suitable for high-frequency switching circuits commonly found in telecommunications and signal processing. The 6-pin SOT-363 package simplifies assembly on automated production lines and reduces the overall system footprint.

Industrial use cases include electronic control units, signal amplification, switching regulators, automotive electronics, and consumer electronic devices. This transistor offers balanced electrical performance, size efficiency, and wide application compatibility.

Choose the Nexperia BC846BPN,115 for a reliable, compact, and high-performance dual NPN and PNP transistor solution in surface mount technology. Maximum DC collector current of 100 mA supports moderate current switching.

Collector-emitter voltage rating up to 65 V for broad circuit compatibility. Low power dissipation of 300 mW ensures efficient performance. High minimum DC current gain (hFE) of 200 enhances amplification. Compact dimensions of 2.2 mm length and width with 1.1 mm height enable dense PCB layouts.

RoHS compliant construction meets environmental standards. Automotive-grade AEC-Q101 certification ensures reliability in harsh conditions. Maximum operating temperature of 150°C supports elevated thermal environments. Maximum transition frequency of 100 MHz suitable for high-frequency switching.

Isolated transistor configuration facilitates flexible circuit design. Browse Nexperia Bipolar Transistors and related semiconductor components on EnvMart for industrial, automotive, and commercial electronic design projects.