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STMicroelectronics MDmesh N-Channel MOSFET, 14 A, 500 V Enhancement Mode, 3-Pin TO-247 STW19NM50N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW19NM50N |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 250mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- Designed with MDmesh™ technology for high performance.
- Features enhancement mode operation with N-channel conduction.
- Supports maximum continuous drain current of 14 amperes.
- Rated for a maximum drain-source voltage of 500 volts.
- Through hole mount type compatible with various PCBs and assemblies.
- Maximum power dissipation of 110 watts for robust thermal management.
- Typical gate charge of 34 nanocoulombs at gate-source voltage.
- Operating temperature ranges from -55°C to a maximum of 150°C.
Product Description
STMicroelectronics STW19NM50N is a high-quality MDmesh N-Channel MOSFET designed for power semiconductor applications requiring efficient switching and high current carrying capacity.
This device supports a maximum continuous drain current of 14 A and can tolerate a drain-source voltage of up to 500 V. Its enhancement mode operation and MDmesh technology provide improved switching performance and reduced conduction losses.
The 3-pin TO-247 package allows straightforward through-hole mounting, facilitating robust and reliable assembly onto printed circuit boards in industrial and commercial electronic devices.
With a maximum power dissipation of 110 W and operating temperature limits from -55°C to 150°C, it is suitable for demanding environments and applications including power management, industrial controls, and consumer electronics.
The MOSFET features a typical gate charge of 34 nC, with a gate-source voltage rating of -25 V to +25 V, allowing efficient gate drive control. Its low 250 mΩ drain-source resistance reduces conduction losses, improving energy efficiency.
Compact physical dimensions of 15.75 mm length, 5.15 mm width, and 20.15 mm height make installation and thermal management easier in various system designs. Designed with MDmesh™ technology for enhanced electrical performance.
3-pin TO-247 package for reliable through-hole mounting. Robust maximum current and voltage ratings suitable for diverse power applications. Wide operating temperature range covering industrial standards. Low forward voltage and drain-source resistance for energy efficiency.
Typical gate charge ensures fast switching capability. Compact size supports flexible PCB layouts and cooling solutions. This STMicroelectronics MOSFET is ideal for use in industrial power converters, motor drives, power supplies, and other high-performance electronic systems.
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Frequently Asked Questions
The maximum continuous drain current for this model is 14 A.
This MOSFET is rated for a maximum drain-source voltage of 500 V.
The typical gate charge at gate-source voltage is 34 nC.
The operating temperature range for this model is from -55°C to a maximum of 150°C.
This unit comes in a TO-247 package type, designed for through-hole mounting.
The maximum power dissipation for this MOSFET is 110 W.
It has a maximum drain-source resistance of 250 mΩ.
The dimensions of this MOSFET are 15.75 mm in length, 5.15 mm in width, and 20.15 mm in height.
This device features an N-channel type configuration.
This MOSFET is suitable for applications including power management, industrial controls, and consumer electronics.
The maximum gate-source voltage rating is -25 V to +25 V.
It is designed with MDmesh™ technology for improved switching performance and reduced conduction losses.
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