DiodesZetex BC817-40-7-F is a small signal NPN bipolar transistor designed for a variety of electronic applications requiring reliable switching and amplification. It supports a maximum DC collector current of 500 mA and maximum collector-emitter voltage of 45 V, packaged in a compact 3-pin SOT-23 surface-mount format ideal for space-constrained PCB layouts.
The device handles a maximum power dissipation of 310 mW, enabling efficient performance with minimal heat generation. It has a minimum DC current gain (hFE) of 170, ensuring strong signal amplification necessary in sensitive electronics and signal processing.
Suitable for a broad range of temperature environments, the transistor operates reliably from -65°C to 150°C. This extended range allows usage in industrial, automotive, and consumer electronics where temperature resilience is critical.
This component meets the automotive standard AEC-Q101, underscoring its robustness and compliance for automotive-grade circuit designs. The transistor configuration is single and NPN polarity which is commonly used in switching and amplification circuits.
The transistor has three pins, with dimensions of 3 mm in length, 2.5 mm in width, and 1.1 mm in height, facilitating easy mounting on printed circuit boards. It supports a maximum collector-base voltage of 50 V and maximum emitter-base voltage of 5 V, ensuring protection against voltage spikes and maintaining circuit integrity.
Manufactured in China, DiodesZetex ensures quality and performance consistency in semiconductor components backed for industrial and commercial use. This transistor features a maximum power dissipation of 310 mW for efficient operation.
Minimum DC current gain (hFE) of 170 ensures good amplification performance. Surface mount package type allows easy PCB integration. Wide operating temperature range from -65°C to 150°C supports demanding applications. Automotive-grade AEC-Q101 standard compliance for reliable use in automotive electronics.
Pin count of 3 with small dimensions (3 mm length, 2.5 mm width, 1.1 mm height). Maximum collector-base voltage of 50 V and maximum emitter-base voltage of 5 V. Single transistor configuration with NPN polarity for versatile circuit designs.
Manufactured in China ensuring consistent quality and performance. Explore more DiodesZetex Bipolar Transistors and related semiconductor components for your industrial, automotive, and electronic manufacturing needs at EnvMart.
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