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DiodesZetex PNP Transistor BC857C-7-F, 100 mA, 45 V, 3-Pin SOT-23 Surface Mount BC857C-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BC857C-7-F
Width 2.5mm
Mount Type Surface
Series BC857C
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 420
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 200MHz

Key Features

  • Maximum DC collector current of 100 mA for efficient switching.
  • Maximum collector-emitter voltage of 45 V suitable for low power amplification.
  • Single transistor configuration with PNP polarity.
  • High current gain with minimum DC current gain (hFE) of 420.
  • Maximum power dissipation of 300 mW ensuring reliability in operations.
  • Operational temperature range from -55°C to 150°C for robust performance.
  • Compact dimensions with 3 mm length, 2.5 mm width, and 1.1 mm height.
  • Compliance with automotive standards AEC-Q100, AEC-Q101, and AEC-Q200.

Product Description

DiodesZetex BC857C-7-F is a small-signal PNP transistor housed in a compact 3-pin SOT-23 surface mount package. This transistor supports a maximum collector current of 100 mA and a collector-emitter voltage of 45 V, making it ideal for low power amplification and switching applications in electronic circuits.

It features a single transistor configuration with PNP polarity and a minimum current gain of 420, enabling efficient current amplification while maintaining low power dissipation rated at 300 mW. The device’s operational temperature range from -55°C to 150°C allows it to function reliably in demanding industrial and automotive environments.

The BC857C-7-F transistor's compact dimensions (3 mm length, 2.5 mm width, 1.1 mm height) facilitate its use in space-constrained printed circuit boards. It meets industry automotive standards including AEC-Q100, AEC-Q101, and AEC-Q200, ensuring its suitability for demanding vehicular and industrial electronics.

Maximum DC collector current of 100 mA. Maximum collector-emitter voltage of 45 V. Single PNP transistor configuration. Minimum DC current gain (hFE) of 420. Maximum power dissipation rating of 300 mW. Operating temperature range: -55°C to 150°C.

Compact 3-pin SOT-23 surface mount package. Meets automotive standards AEC-Q100, AEC-Q101, and AEC-Q200. Maximum transition frequency of 200 MHz. Dimensions: Length 3 mm, Width 2.5 mm, Height 1.1 mm.

This transistor is widely used in electronic components, power and connector assemblies, semiconductor designs, and discrete semiconductor applications requiring reliable small signal performance. It is suitable for industrial, automotive, and electronic manufacturing sectors.

For detailed technical design and integration, datasheets and application notes are available to support engineering development. Explore more Bipolar Transistors at EnvMart for advanced semiconductor components aligned with your project needs.

DiodesZetex PNP Transistor BC857C-7-F, 100 mA, 45 V, 3-Pin SOT-23 Surface Mount BC857C-7-F
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Frequently Asked Questions

The maximum DC collector current for the BC857C-7-F transistor is 100 mA.

The BC857C-7-F has a maximum collector-emitter voltage rating of 45 V.

This model features a minimum DC current gain (hFE) of 420.

The dimensions of the BC857C-7-F are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The maximum power dissipation for the BC857C-7-F is rated at 300 mW.

The operational temperature range for the BC857C-7-F is from -55°C to 150°C.

This transistor comes in a compact 3-pin SOT-23 surface mount package.

The BC857C-7-F complies with automotive standards AEC-Q100, AEC-Q101, and AEC-Q200.

The maximum transition frequency of this model is 200 MHz.

The BC857C-7-F features a single transistor configuration with PNP polarity.

The maximum emitter-base voltage (VEBO) for the BC857C-7-F is -5 V.

This model is suitable for low power amplification and switching applications in electronic circuits.

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