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onsemi Small Signal PNP Transistor, Maximum DC Collector Current -100 mA, Maximum Collector Emitter Voltage 30 V BC858CLT3G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model BC858CLT3G
Width 2.64mm
Mount Type Surface
Series BC856ALT1G
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -30V
Minimum DC Current Gain hFE 420
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 30V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Small signal PNP transistor suitable for switching and amplification.
  • Maximum DC collector current of 100 mA ensures moderate current handling.
  • Collector-emitter voltage rating up to 30 V for versatile circuit applications.
  • Surface mount package type SOT-23 with 3 pins for compact PCB layouts.
  • Maximum power dissipation of 300 mW for steady operation.
  • High minimum DC current gain (hFE) of 420 for effective amplification.
  • Wide operating temperature range from -55°C to 150°C for robust performance.
  • Transition frequency of 100 MHz suitable for high-frequency applications.

Product Description

The onsemi BC858CLT3G transistor is a small signal PNP device designed for versatile electronic applications including switching and amplification. It features a 3-pin SOT-23 surface mount package, supporting compact and efficient PCB designs. With a maximum collector current of 100 mA and collector-emitter voltage of 30 V, this transistor suits a wide range of industrial, automotive, and consumer electronic uses.

Key electrical characteristics include a high minimum DC current gain (hFE) of 420 and maximum power dissipation rated at 300 mW, ensuring reliable amplification and thermal stability. The device operates reliably in harsh conditions, with a temperature range spanning from -55°C to 150°C, and a transition frequency of 100 MHz allowing high-frequency functionality.

The BC858CLT3G meets the automotive standard AEC-Q101, making it well-suited for automotive electronics and other high-reliability environments. The transistor’s pin count of 3 and compact dimensions (3.04 mm length, 2.64 mm width, 1.11 mm height) optimize space utilization in densely packed circuit boards.

Small signal PNP transistor with maximum collector current of 100 mA. Collector-emitter voltage rating up to 30 V for versatile applications. Surface mount SOT-23 package with 3 pins for compact layout. Maximum power dissipation of 300 mW for reliable operation.

High minimum DC current gain (hFE) of 420 ensures effective amplification. Wide operating temperature range from -55°C to 150°C. Transition frequency of 100 MHz for high-frequency use cases. Compliant with automotive standard AEC-Q101 for enhanced quality.

This compact transistor is ideal for industrial, automotive, manufacturing, and consumer electronics applications requiring efficient switching and signal amplification. Explore a broad range of Bipolar Transistors on EnvMart for your next design project.

onsemi Small Signal PNP Transistor, Maximum DC Collector Current -100 mA, Maximum Collector Emitter Voltage 30 V BC858CLT3G
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Frequently Asked Questions

The maximum DC collector current for this model is -100 mA.

The collector-emitter voltage rating is up to 30 V.

It uses a surface mount SOT-23 package type with 3 pins.

The maximum power dissipation is rated at 300 mW.

The minimum DC current gain (hFE) is 420.

The operating temperature range is from -55°C to 150°C.

The transition frequency is 100 MHz, making it suitable for high-frequency applications.

Yes, it meets the automotive standard AEC-Q101.

The dimensions are 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

The maximum emitter-base voltage (VEBO) is 5 V.

It has a single transistor configuration.

The maximum collector-base voltage (VCBO) is 30 V.

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