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onsemi Transistor NPN Bipolar 2 A 450 V TO-220 3-Pin Through Hole BUX85G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 30.02mm |
| Length | 10.53mm |
| Model | BUX85G |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 450V |
| Minimum DC Current Gain hFE | 30 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Power Dissipation Pd | 50W |
| Maximum DC Collector Current Idc | 2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 4MHz |
Key Features
- Supports a maximum DC collector current of 2 amperes.
- Maximum collector emitter voltage rating is 450 volts ensuring high-voltage operation.
- Packaged in through-hole TO-220 style with 3 pins for easy PCB mounting.
- Maximum power dissipation of 50 watts allowing efficient thermal management.
- Transistor polarity is NPN, suitable for amplifying and switching applications.
- Minimum DC current gain (hFE) is 30, suitable for moderate gain requirements.
- Operating temperature range from -65°C to 150°C supports harsh environments.
- Maximum emitter base voltage is 5 volts for voltage protection.
Product Description
onsemi BUX85G Bipolar NPN Transistor is designed for electronic component applications requiring moderate power and voltage handling capabilities. This transistor features a maximum DC collector current of 2 amperes and a collector emitter voltage rating up to 450 volts. It is housed within a 3-pin TO-220 through-hole package, facilitating easy mounting on printed circuit boards for various electronics manufacturing.
The device supports a maximum power dissipation of 50 watts, allowing for efficient heat management during operation. Its transistor polarity is NPN, which is widely used for switching and amplification circuits. The minimum DC current gain (hFE) of 30 ensures stable performance, while the emitter base voltage limit of 5 volts provides adequate protection for base-emitter junctions.
The operating temperature range is extensive, from -65°C to 150°C, making it suitable for applications in demanding environments including industrial and automotive use cases, notwithstanding it is not automotive standard qualified. Its maximum transition frequency of 4 MHz permits operation in moderately high frequency switching tasks.
Dimensions are compact, with a length of 10.53 mm, height of 30.02 mm, and width of 4.83 mm, optimizing board space. The device is intended for discrete semiconductor applications requiring reliable bipolar transistor functionality with through-hole mounting.
Supports a maximum DC collector current of 2 amperes. High voltage operation up to 450 volts collector emitter voltage. Through hole mounting in 3-pin TO-220 package. Maximum power dissipation of 50 watts. Bipolar NPN transistor polarity.
Minimum DC current gain of 30. Wide operating temperature range from -65°C to 150°C. Emitter base voltage limit at 5 volts. Transition frequency up to 4 MHz. Compact package dimensions optimize PCB layout.
This transistor serves diverse industrial, laboratory, electronic manufacturing, and commercial equipment applications requiring reliable power transistor performance. For more options, browse our Bipolar Transistor category at EnvMart.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The BUX85G supports a maximum DC collector current of 2 amperes.
It has a maximum collector-emitter voltage rating of 450 volts, allowing for high-voltage operation.
This model can handle a maximum power dissipation of 50 watts, which aids in efficient thermal management.
The operating temperature range is from -65°C to 150°C, making it suitable for harsh environments.
The minimum DC current gain (hFE) is 30, which is suitable for moderate gain requirements.
The maximum emitter-base voltage is 5 volts, providing voltage protection for the base-emitter junction.
The dimensions are 10.53 mm in length, 30.02 mm in height, and 4.83 mm in width.
It is packaged in a TO-220 style with 3 pins, facilitating through-hole mounting on PCBs.
The maximum transition frequency is 4 MHz, allowing for operation in moderately high frequency switching tasks.
This model is an NPN bipolar transistor, suitable for amplifying and switching applications.
The BUX85G is configured as a single transistor, designed for discrete semiconductor applications.
The country of origin for the BUX85G is India.
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