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STMicroelectronics STD N-Channel MOSFET, 10 A, 480 V Depletion Mode, 3-Pin TO-252 Surface Mount STD13N60M6

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 10.1mm
Length 6.6mm
Model STD13N60M6
Width 2.4mm
Mount Type Surface
Series STD
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 10A
Maximum Drain Source Voltage Vds 480V
Maximum Drain Source Resistance Rds 380mΩ
Channel Mode Depletion
Maximum Power Dissipation Pd 92W
Typical Gate Charge Qg @ Vgs 13nC
Maximum Gate Source Voltage Vgs 25V

Key Features

  • Supports depletion mode operation suitable for various power management applications.
  • Surface mount package ensures compact PCB design and efficient heat dissipation.
  • Maximum power dissipation of 92 W allows handling of substantial currents safely.
  • Low typical gate charge of 13 nC enables fast switching performance.
  • Operating temperature range from -55°C to 175°C makes it suitable for harsh environments.
  • Maximum drain-source resistance of 380 mΩ reduces conduction losses.
  • Protected with built-in zener diode for avalanche robustness.
  • 3-pin configuration simplifies circuit designs and connectivity.

Product Description

The STMicroelectronics STD13N60M6 is a N-Channel MDmesh M6 Power MOSFET designed to deliver efficient power management in industrial and commercial electronic applications. Packaged in a compact DPAK (TO-252) surface mount package, this MOSFET offers significantly reduced switching losses and lower RDS(on) per area compared to previous generations.

It supports a maximum continuous drain current of 10 A and can withstand maximum drain-source voltages up to 480 V, making it ideal for power conversion, motor control, and switched-mode power supplies.

With a maximum power dissipation of 92 W and a wide operating temperature range from -55°C to 175°C, this device is capable of operating reliably in harsh and demanding industrial environments. Its typical gate charge of 13 nC ensures fast switching times, optimizing efficiency in high-frequency applications.

The device features a depletion mode channel and is avalanche tested to provide enhanced ruggedness and protection against voltage spikes. The built-in zener protection increases the robustness against transient conditions, improving overall device reliability.

Depletion mode N-Channel MOSFET for efficient power control. Surface mount TO-252 package supports compact and efficient PCB layouts. Rated for 10 A continuous drain current and 480 V drain-source voltage. Maximum power dissipation of 92 W for reliable operation at high load.

Low gate charge of 13 nC for high switching speed and efficiency. Wide operating temperature range from -55°C to 175°C for enhanced reliability. Robust avalanche tested design with integrated zener protection. 3-pin configuration suitable for various electronic circuit designs.

This MOSFET is ideally used in industrial electronics, power management systems, consumer appliances, and automotive applications where efficient, reliable switching at elevated voltages and currents is required.

Explore more electronic components including semiconductors and MOSFETs at EnvMart to find suitable solutions for your design and manufacturing needs.

STMicroelectronics STD N-Channel MOSFET, 10 A, 480 V Depletion Mode, 3-Pin TO-252 Surface Mount STD13N60M6
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Frequently Asked Questions

The maximum continuous drain current for this model is 10 A.

This MOSFET can withstand a maximum drain-source voltage of 480 V.

It has a maximum power dissipation rating of 92 W.

The typical gate charge for this device is 13 nC.

The operating temperature range is from -55°C to 175°C.

It is packaged in a TO-252 surface mount package.

This model features a 3-pin configuration.

The maximum drain-source resistance is 380 mΩ.

It utilizes a depletion mode N-channel.

Yes, its low typical gate charge of 13 nC enables fast switching performance, making it suitable for high-frequency applications.

It is protected with a built-in zener diode for avalanche robustness, enhancing its reliability against voltage spikes.

This MOSFET is suitable for power management systems, motor control, and industrial electronics applications.

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