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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 41.2mm |
| Length | 15.9mm |
| Model | STW48N60M6-4 |
| Width | 5.1mm |
| Mount Type | Through Hole |
| Series | ST |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 39A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 0.061Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 57nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.6V |
STMicroelectronics STW48N60M6-4 is a robust N-Channel MOSFET designed for high power electronic applications requiring efficient switching and thermal handling. It is built using the advanced MDmesh™ M6 technology that enhances the performance characteristics including avalanche robustness and Zener protection.
This depletion mode MOSFET supports a high continuous drain current of 39 A, making it suitable for industrial power management, motor drives, and switching power supplies. The device is packaged in a TO-247 form factor with 4 pins and through-hole mounting, providing ease of installation and reliable mechanical strength.
The low drain-source resistance of 0.061 Ω contributes to minimizing conduction losses, improving efficiency in circuits. Its maximum power dissipation is 250 W, allowing operation in high-demand environments with appropriate heat sinking.
The MOSFET functions with a gate charge of 57 nC at a gate-source voltage, facilitating rapid switching cycles essential for power converters and regulators. It operates reliably in temperature extremes ranging from -55°C to 150°C, ideal for demanding industrial and commercial environments.
The maximum gate-source voltage rating of 25 V ensures protection for the gate terminal during transient conditions. Although this device does not have special automotive approvals, it adheres to standard industrial specifications.
Capable of maximum continuous drain current up to 39 A. Supports maximum drain-source voltage of 600 V. Encapsulated in a TO-247 package with 4 pins and through-hole mount type. Features low drain-source resistance of 0.061 Ohm for efficient power conduction.
Maximum power dissipation rating of 250 W for robust thermal performance. Operates in depletion mode with a forward voltage of 1.6 V. Typical gate charge at Vgs is 57 nC facilitating fast switching. Designed for operation over a wide temperature range from -55 to 150 °C.
Maximum gate-source voltage is rated at 25 V ensuring safety margin for gate drive. Meets industrial standards without automotive certification.
This MOSFET is well suited for industrial power electronics, semiconductor device applications, power management systems, HVAC controls, and manufacturing automation equipment. Its TO-247 package aids thermal management when used with appropriate heat sinks.
For more power semiconductor and MOSFET solutions, explore the Electronics & Electricals section at EnvMart for quality assured products.
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