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Vishay TrenchFET N-Channel MOSFET 100 A 40 V Enhancement Mode 3-Pin TO-252 SQD40020E_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.57mm |
| Length | 10.41mm |
| Model | SQD40020E_GE3 |
| Width | 9.65mm |
| Mount Type | PCB |
| Series | TrenchFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101 |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.00233Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 107W |
| Typical Gate Charge Qg @ Vgs | 84nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Enhancement mode N-Channel operation for efficient switching.
- Maximum drain-source resistance of 0.00233 ohms ensures low power loss.
- Rated for high power dissipation of 107 W for reliable performance.
- Operates effectively from -55°C to 175°C temperature range suitable for automotive applications.
- Package type TO-252 designed for PCB mount with three pins for optimized connectivity.
- Typical gate charge of 84 nC at Vgs enhances fast switching capabilities.
- Maximum gate-source voltage rating of 20 V protects the MOSFET from gate stress.
- Forward voltage drop of 1.5 V supports efficient conduction.
Product Description
Vishay SQD40020E_GE3 TrenchFET N-Channel MOSFET is an automotive-grade transistor designed to handle 100 amperes continuous drain current at a maximum drain-source voltage of 40 volts. Encapsulated in a TO-252 package, this enhancement mode MOSFET is suitable for PCB mounting and provides a low power loss alternative with its extremely low Rds(on) value of 0.00233 ohms.
This device supports a maximum power dissipation of 107 watts and operates efficiently across a wide temperature range from -55°C to 175°C, making it ideal for use in harsh automotive and industrial environments. Its typical gate charge of 84 nC facilitates quick switching speeds, enhancing system performance in power management applications.
The MOSFET's maximum gate-source voltage is rated at 20 volts, providing robustness against voltage spikes and gate stress. The forward voltage drop of 1.5 volts helps in maintaining conduction efficiency. Dimensions of 10.41 mm length, 9.65 mm width, and 4.57 mm height provide a compact footprint for high-density PCB designs.
Designed according to AEC-Q101 standards, this MOSFET is manufactured for automotive reliability and quality assurance. It is suitable for use in power supply circuits, motor drivers, battery management systems, and DC-DC converters in automotive, industrial, and manufacturing sectors.
Enhancement mode N-Channel MOSFET for high efficiency switching applications. Low Rds(on) resistance of 0.00233 ohms reduces conduction losses. High continuous drain current of 100 A supports heavy load conditions. Wide operating temperature range from -55°C to 175°C for reliability in harsh conditions.
Compliance with AEC-Q101 automotive standards for quality assurance. TO-252 package ensures low thermal resistance and robust mounting. Typical gate charge of 84 nC enables fast switching performance. Maximum power dissipation rating of 107 W for sustained operation.
Compact physical dimensions enable integration into space-limited designs. Applications include automotive electronics, power management, and industrial controls.
This Vishay TrenchFET MOSFET brings trusted performance standards and is an excellent choice for engineers developing automotive and industrial electronic systems. Explore more power semiconductor solutions in the MOSFET category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
It operates efficiently within a temperature range of -55°C to 175°C.
The maximum drain-source voltage is 40 V.
This model is encapsulated in a TO-252 package designed for PCB mounting.
The typical gate charge at Vgs is 84 nC, which enhances its fast switching capabilities.
It supports a maximum power dissipation of 107 W.
The forward voltage drop is 1.5 V, which supports efficient conduction.
The dimensions are 10.41 mm in length, 9.65 mm in width, and 4.57 mm in height.
It is designed according to AEC-Q101 standards for automotive applications.
The maximum gate-source voltage rating is 20 V, providing protection against gate stress.
This model features an enhancement mode N-channel configuration.
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