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STMicroelectronics N-Channel MOSFET, 7.5 A, 60 V Enhancement Mode, 8-Pin SO-8 STS7NF60L
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 1.65mm |
| Length | 5mm |
| Model | STS7NF60L |
| Width | 4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.5A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 21mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 1.2V |
Key Features
- Enhancement mode N-Channel MOSFET optimized for low on-resistance.
- Operates at a maximum continuous drain current of 7.5 amperes.
- Rated for a maximum drain-source voltage of 60 volts.
- Compact SO-8 package with 8 pins suitable for automated assembly.
- Maximum power dissipation of 2.5 watts allowing efficient thermal management.
- Features a low typical drain-source resistance (Rds) of 21 milliohms.
- Supports operating temperatures ranging from -55°C to 150°C.
- Maximum gate-source voltage of 16 volts with a typical gate charge of 25 nanocoulombs.
Product Description
STMicroelectronics STS7NF60L is a high-performance N-Channel MOSFET in an 8-pin SO-8 surface mount package, capable of handling a continuous drain current of 7.5 A and a maximum drain-source voltage of 60 V. It features enhancement mode operation with a typical low on-resistance of 21 mΩ, making it ideal for efficient power switching.
This MOSFET supports a wide operating temperature range from -55°C to 150°C, ensuring reliability in demanding industrial and automotive environments. Its maximum power dissipation rating of 2.5 W facilitates effective thermal management in compact electronic designs.
The device has a typical gate charge of 25 nC at a gate-source voltage of 5 V, enabling fast switching performance. The maximum gate-source voltage rating is 16 V, and the forward voltage drop is 1.2 V, supporting efficient energy transfer.
Packaged in a standard SO-8 outline measuring 5 mm in length, 4 mm in width, and 1.65 mm in height, it is suitable for automated surface mount technology (SMT) assembly processes.
Typical applications include DC motor drives, DC-DC converters, battery management systems, portable devices, and other power management equipment in industrial, commercial, and automotive sectors.
Enhancement mode N-Channel configuration for efficient switching. Low Rds(on) ensures reduced conduction losses. Wide temperature tolerance from -55° to 150°C. Compact SO-8 package ideal for surface mount assembly. Suitable for DC motor drive and DC-DC converter applications.
This product is manufactured new by STMicroelectronics and meets all quality standards for reliability and performance. Explore more power semiconductor devices and MOSFETs in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of the STS7NF60L is 7.5 A.
This model has a maximum drain-source voltage rating of 60 V.
It features a typical drain-source on-resistance (Rds) of 21 milliohms.
It operates within a temperature range of -55°C to 150°C.
The device is packaged in an SO-8 package, measuring 5 mm in length, 4 mm in width, and 1.65 mm in height.
The maximum power dissipation rating is 2.5 W, allowing for effective thermal management.
The typical gate charge at a gate-source voltage of 5 V is 25 nanocoulombs (nC).
The maximum gate-source voltage rating is 16 V.
This MOSFET is suitable for applications such as DC motor drives, DC-DC converters, and battery management systems.
It supports surface mount technology (SMT) assembly.
The forward voltage drop is rated at 1.2 V.
The STS7NF60L is manufactured in India.
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