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STMicroelectronics N-Channel MOSFET 7A 650V Enhancement Mode Surface Mount 3-Pin TO-252 STD11N65M2

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.17mm
Length 6.6mm
Model STD11N65M2
Width 6.2mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 7A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 680mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 85W
Typical Gate Charge Qg @ Vgs 100nC
Maximum Gate Source Voltage Vgs 25V
Forward Voltage Vf 1.6V

Key Features

  • Constructed using advanced MDmesh M2 technology for low on-resistance and optimized switching.
  • Offers extremely low gate charge to improve switching efficiency.
  • Features an excellent output capacitance (COSS) profile for high-efficiency converters.
  • Suitable for demanding switching applications with 85 W power dissipation.
  • Operates safely between -55°C and 150°C for extended environmental resilience.
  • Comes in a compact TO-252 package with dimensions of 6.6 mm length, 6.2 mm width, and 2.17 mm height.
  • Maximum gate-source voltage rating of 25 V ensures robust gate protection.
  • Forward voltage drop is 1.6 V, optimizing conduction losses.

Product Description

STMicroelectronics STD11N65M2 is a high-performance N-Channel MOSFET specifically designed for power electronic applications requiring high efficiency and robust switching characteristics. Built on MDmesh M2 technology, this MOSFET exhibits low on-resistance and minimal gate charge, key factors in reducing power loss and enhancing performance in power management systems.

Housed in a compact 3-pin TO-252 surface-mount package, the device measures 6.6 mm in length, 6.2 mm in width, and 2.17 mm in height, facilitating integration into compact electronic assemblies. The MOSFET can handle a maximum continuous drain current of 7 A and withstand up to 650 V drain-source voltage, making it suited for a wide range of medium power applications.

This device features an enhancement-mode channel, with a maximum gate-source voltage rating of 25 V to ensure gate stability, and a forward voltage drop of 1.6 V to optimize conduction efficiency. The maximal power dissipation is rated at 85 W, which supports high-performance switching applications.

Advanced MDmesh M2 technology ensures low on-resistance and superior switching. Extremely low gate charge enhances switching speed and efficiency. Excellent output capacitance (COSS) profile optimized for converter applications.

Robust operation from -55°C up to 150°C allows wide environmental use. Compact TO-252 form-factor useful for surface mount technology. Maximum continuous drain current of 7 A and drain-source voltage up to 650 V. Forward voltage of 1.6 V balances conduction efficiency and heat dissipation.

Maximum power dissipation of 85 W supports demanding industrial applications. Suitable for industrial electronics, power supply regulation, and switching converters.

This product enables power electronic designers to build efficient, reliable converters and switching circuits across a range of applications including industrial, automotive (non-certified), solar inverters, and general electronics. The balance of voltage, current, and low gate charge makes it especially valuable in high-frequency switching environments.

STMicroelectronics offers this MOSFET as part of its line of discrete semiconductors, backed by technical documentation and compliance with environmental standards. This device is ideal for customers needing reliable, high-quality power MOSFETs for advanced converter designs and power management systems.

Explore more STMicroelectronics power components and semiconductor devices to optimize your design workflow and ensure high system reliability. EnvMart provides comprehensive selections for industrial and commercial electronics needs.

STMicroelectronics N-Channel MOSFET 7A 650V Enhancement Mode Surface Mount 3-Pin TO-252 STD11N65M2
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Frequently Asked Questions

The maximum continuous drain current for this model is 7 A.

This MOSFET can withstand a maximum drain-source voltage of 650 V.

It operates safely between -55°C and 150°C, allowing for wide environmental use.

It is housed in a compact TO-252 surface-mount package.

The forward voltage drop is 1.6 V, which helps optimize conduction losses.

The maximum gate-source voltage rating is 25 V, ensuring robust gate protection.

The typical gate charge is 100 nC at Vgs.

The maximum power dissipation is rated at 85 W, supporting high-performance applications.

It measures 6.6 mm in length, 6.2 mm in width, and 2.17 mm in height.

This model is constructed using advanced MDmesh M2 technology for low on-resistance and optimized switching.

It is suitable for industrial electronics, power supply regulation, and switching converters.

This device features a 3-pin configuration.

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