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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.17mm |
| Length | 6.6mm |
| Model | STD11N65M2 |
| Width | 6.2mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 680mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 85W |
| Typical Gate Charge Qg @ Vgs | 100nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.6V |
STMicroelectronics STD11N65M2 is a high-performance N-Channel MOSFET specifically designed for power electronic applications requiring high efficiency and robust switching characteristics. Built on MDmesh M2 technology, this MOSFET exhibits low on-resistance and minimal gate charge, key factors in reducing power loss and enhancing performance in power management systems.
Housed in a compact 3-pin TO-252 surface-mount package, the device measures 6.6 mm in length, 6.2 mm in width, and 2.17 mm in height, facilitating integration into compact electronic assemblies. The MOSFET can handle a maximum continuous drain current of 7 A and withstand up to 650 V drain-source voltage, making it suited for a wide range of medium power applications.
This device features an enhancement-mode channel, with a maximum gate-source voltage rating of 25 V to ensure gate stability, and a forward voltage drop of 1.6 V to optimize conduction efficiency. The maximal power dissipation is rated at 85 W, which supports high-performance switching applications.
Advanced MDmesh M2 technology ensures low on-resistance and superior switching. Extremely low gate charge enhances switching speed and efficiency. Excellent output capacitance (COSS) profile optimized for converter applications.
Robust operation from -55°C up to 150°C allows wide environmental use. Compact TO-252 form-factor useful for surface mount technology. Maximum continuous drain current of 7 A and drain-source voltage up to 650 V. Forward voltage of 1.6 V balances conduction efficiency and heat dissipation.
Maximum power dissipation of 85 W supports demanding industrial applications. Suitable for industrial electronics, power supply regulation, and switching converters.
This product enables power electronic designers to build efficient, reliable converters and switching circuits across a range of applications including industrial, automotive (non-certified), solar inverters, and general electronics. The balance of voltage, current, and low gate charge makes it especially valuable in high-frequency switching environments.
STMicroelectronics offers this MOSFET as part of its line of discrete semiconductors, backed by technical documentation and compliance with environmental standards. This device is ideal for customers needing reliable, high-quality power MOSFETs for advanced converter designs and power management systems.
Explore more STMicroelectronics power components and semiconductor devices to optimize your design workflow and ensure high system reliability. EnvMart provides comprehensive selections for industrial and commercial electronics needs.
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