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onsemi UniFET Ultra FRFET MOSFET Digital Transistor N-Channel Surface Mount 2-Pin 313W Maximum Power Dissipation FDB38N30U

Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 4.58mm
Length 10.67mm
Model FDB38N30U
Width 9.65mm
Mount Type Surface
Series UniFET Ultra FRFET MOSFET
Maximum Operating Temperature 150°C
Standards/Approvals RoHS
Pin Count 2
Transistor Polarity N-Channel
Maximum Power Dissipation Pd 313W

Key Features

  • This digital transistor features a maximum power dissipation of 313W.
  • The MOSFET is designed with planar stripe and DMOS technology for improved performance.
  • The device has a low gate charge, enhancing switching speed and efficiency.
  • The transistor includes a 2-pin surface mount configuration suitable for compact electronic devices.
  • It has a maximum operating temperature rating of 150°C for reliable thermal performance.
  • This transistor series offers superior body diode reverse recovery with trr less than 50nsec.
  • Applications include power factor correction, flat panel display TV power supplies, and electronic lamp ballasts.

Product Description

onsemi FDB38N30U UniFET Ultra FRFET MOSFET Digital Transistor N-Channel is a 2-pin surface mount semiconductor device with a maximum power dissipation of 313W and maximum operating temperature of 150°C. Designed using advanced planar stripe and DMOS technology, this transistor achieves reduced on-state resistance and improved switching performance. It features a low gate charge (typical 56nC), low Crss capacitance (typical 55pF), and a body diode with exceptional reverse recovery characteristics.

This high voltage MOSFET is ideal for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX power supplies, and electronic lamp ballasts. The UniFET Ultra FRFET technology provides high avalanche energy strength and low reverse dv/dt susceptibility, enabling enhanced system reliability and performance.

The device comes in a compact 2-pin surface mount package which allows for efficient PCB layout and thermal management. The transistor polarity is N-Channel, making it suitable for various electronic designs requiring efficient switching elements.

This Digital Transistor features a maximum power dissipation of 313W. UniFET Ultra FRFET MOSFET technology reduces on-state resistance, improving switching efficiency. The device has a 2-pin surface mount configuration for compact electronic assemblies.

Low gate charge and low Crss capacitance enable fast switching speeds. Maximum operating temperature is rated at 150°C for high reliability in demanding environments. Suitable for power factor correction circuits and flat panel display TV power supply applications.

Manufactured in China and compliant with RoHS standards.

This product is new and designed for industrial and commercial electronic applications requiring high performance MOSFET transistors. Explore more digital and bipolar transistors to find the perfect component for your electronics projects and industrial systems.

onsemi UniFET Ultra FRFET MOSFET Digital Transistor N-Channel Surface Mount 2-Pin 313W Maximum Power Dissipation FDB38N30U
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Frequently Asked Questions

The maximum power dissipation of this digital transistor is 313W.

The maximum operating temperature for this model is rated at 150°C.

It features a surface mount configuration, suitable for compact electronic devices.

This model has a pin count of 2.

The transistor polarity of this model is N-Channel.

It has a low gate charge, which enhances switching speed and efficiency.

The dimensions are 10.67mm in length, 9.65mm in width, and 4.58mm in height.

It is designed using planar stripe and DMOS technology for improved performance.

This transistor is suitable for power factor correction, flat panel display TV power supplies, and electronic lamp ballasts.

Yes, it is compliant with RoHS standards.

This product is manufactured in China.

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