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Nexperia N-Channel MOSFET 7.2 A, 30 V Enhancement, 3-Pin SOT-23 PMV20XNER
Specifications
| Country of Origin | China |
|---|---|
| Brand | Nexperia |
| Height | 1mm |
| Length | 3mm |
| Model | PMV20XNER |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | PMV20XNE |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.2A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 38mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6.94W |
| Typical Gate Charge Qg @ Vgs | 12.4nC |
| Maximum Gate Source Voltage Vgs | 12V |
| ElectroStatic Discharge (ESD) protection | 2 kV HBM |
Key Features
- The MOSFET utilizes trench technology for enhanced performance and low threshold voltage.
- It features a maximum power dissipation of 6.94 W suitable for surface-mount applications.
- Electrostatic Discharge (ESD) protection up to 2 kV HBM ensures reliability in industrial environments.
- Operates efficiently across a wide temperature range of -55°C to 150°C.
- Ideal for relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
- Compact dimensions with 3 mm length, 1.4 mm width, and 1 mm height facilitate PCB space savings.
- Maximum gate-source voltage rating of 12 V supports robust switching operations.
Product Description
Nexperia PMV20XNER is a robust N-Channel Enhancement Mode MOSFET designed with trench MOSFET technology encapsulated in a small 3-pin SOT-23 surface-mount package. It offers a maximum continuous drain current of 7.2 A and withstands a maximum drain-source voltage of 30 V. This device is optimized for high performance and power efficiency in industrial and electronic applications.
Featuring a low threshold voltage and enhanced power dissipation capacity of 6.94 W, this MOSFET maintains reliable operation in demanding environments. The device is rated for a maximum operating temperature of 150°C and a minimum operating temperature of -55°C, providing wide thermal tolerance.
To protect sensitive circuitry, the PMV20XNER includes ElectroStatic Discharge (ESD) protection rated at 2 kV Human Body Model (HBM), enhancing device reliability and longevity.
Applications for this MOSFET include relay drivers, high-speed line drivers, low-side load switching, and various switching circuit implementations within industrial, manufacturing, and commercial electronic systems.
The MOSFET utilizes trench technology for enhanced performance and low threshold voltage. It features a maximum power dissipation of 6.94 W suitable for surface-mount applications. Electrostatic Discharge (ESD) protection up to 2 kV HBM ensures reliability in industrial environments.
Operates efficiently across a wide temperature range of -55°C to 150°C. Ideal for relay drivers, high-speed line drivers, low-side load switches, and switching circuits. Compact dimensions with 3 mm length, 1.4 mm width, and 1 mm height facilitate PCB space savings.
Maximum gate-source voltage rating of 12 V supports robust switching operations. Its surface-mount package and trench technology make it suitable for modern electronic designs requiring efficient power switching and minimal space usage.
Explore more Nexperia MOSFETs and related semiconductor products in the Electronics & Electricals category at EnvMart for your electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 7.2 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
It features a maximum power dissipation of 6.94 W, suitable for surface-mount applications.
The device operates efficiently across a wide temperature range of -55°C to 150°C.
It is encapsulated in a small 3-pin SOT-23 surface-mount package.
The maximum gate-source voltage rating for this model is 12 V.
It includes ElectroStatic Discharge (ESD) protection rated at 2 kV Human Body Model (HBM).
The dimensions are 3 mm in length, 1.4 mm in width, and 1 mm in height.
It is ideal for relay drivers, high-speed line drivers, low-side load switches, and various switching circuits.
The typical gate charge at Vgs is 12.4 nC.
This model features an N-channel type configuration.
The maximum drain-source resistance is 38 mΩ.
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