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DiodesZetex Darlington Transistor PNP 3-Pin SOT-23 30 V -500 mA 300 mW HFE 10000 MMBTA63-7-F

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DiodesZetex Darlington Transistor PNP 3-Pin SOT-23 30 V -500 mA 300 mW HFE 10000 MMBTA63-7-F

Name: DiodesZetex Darlington Transistor PNP 3-Pin SOT-23 30 V -500 mA 300 mW HFE 10000 MMBTA63-7-F
Brand: DiodesZetex
SKU: 395723
Price: 0.05 USD
Availability: InStock

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Category Darlington Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1mm
Length	3mm
Model	MMBTA63-7-F
Mount Type	Surface
Series	MMBTA63/64
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Continuous Collector Current Ic	-500mA
Maximum Collector Emitter Voltage Vceo	30V
Number of Elements per Chip	1
Minimum DC Current Gain hFE	10000
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-10V
Maximum Collector Emitter Saturation Voltage VceSAT	-30V
Maximum Collector Base Voltage VCBO	-30V
Maximum Collector Cut-off Current	-100nA
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	300mW
DiodesZetex 1 Darlington Transistor PNP, -500 mA 30 V HFE	10000, 3-Pin SOT-23

Key Features

This transistor provides a maximum continuous collector current of -500 mA.
It supports a collector-emitter voltage of 30 V ensuring robust performance.
The device features a minimum DC current gain (hFE) of 10000 for efficient amplification.
Package type is SOT-23 with a compact 3-pin surface mount design.
Maximum power dissipation is rated at 300 mW for safe operation.
Operating temperature ranges from -55°C to 150°C, suitable for harsh environments.
Complies with automotive standard AEC-Q101 for quality assurance.

Product Description

DiodesZetex MMBTA63-7-F is a PNP type Darlington transistor housed in a compact 3-pin SOT-23 surface mount package. It offers a maximum continuous collector current of -500 mA and a collector-emitter voltage of 30 V, making it ideal for low power amplification tasks.

The transistor features an exceptionally high DC current gain (hFE) of 10000, enabling significant amplification with minimal input current. Its power dissipation rating of 300 mW and operating temperature range from -55°C to 150°C ensure dependable performance in a wide range of electronic and automotive applications.

The device supports a maximum emitter base voltage of -10 V and maximum collector base voltage of -30 V. With maximum collector emitter saturation voltage of -30 V and a maximum collector cut-off current of -100 nA, it delivers stable switching and amplification characteristics.

Designed to meet the AEC-Q101 automotive standard, this transistor is reliable for automotive industry uses where durability and high-quality are essential. The compact SOT-23 package with dimensions of approximately 3 mm length and 1 mm height helps save PCB space and enables surface mount assembly.

Typical applications include signal amplification in electronic circuits, automotive electronic modules, and general-purpose switching tasks. This transistor is well suited for industrial, automotive, laboratory, and manufacturing environments where efficient low power electronic switching and amplification are required.

This transistor provides a maximum continuous collector current of -500 mA. It supports a collector-emitter voltage of 30 V ensuring robust performance. The device features a minimum DC current gain (hFE) of 10000 for efficient amplification.

Package type is SOT-23 with a compact 3-pin surface mount design. Maximum power dissipation is rated at 300 mW for safe operation. Operating temperature ranges from -55°C to 150°C, suitable for harsh environments. Complies with automotive standard AEC-Q101 for quality assurance.

Explore more in the DiodesZetex range and other Darlington Transistors at EnvMart for your electronic component needs.