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onsemi Transistor 900 mA NPN 40 V 3-Pin SOT-23 MMBT3904LT3G

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onsemi Transistor 900 mA NPN 40 V 3-Pin SOT-23 MMBT3904LT3G

Name: onsemi Transistor 900 mA NPN 40 V 3-Pin SOT-23 MMBT3904LT3G
Brand: onsemi
SKU: 395646
Price: 0.03 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Height	2.64mm
Length	3.04mm
Model	MMBT3904LT3G
Width	1.4mm
Mount Type	Surface
Series	MMBT3904L
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	40V
Minimum DC Current Gain hFE	30
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	60V dc
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	300mW
Maximum DC Collector Current Idc	900mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

This NPN transistor supports up to 900 mA maximum DC collector current.
Maximum collector-emitter voltage is 40 volts.
Low power dissipation capacity of 300 mW suitable for small signal applications.
Features a transition frequency of 100 MHz for high-speed switching.
Designed for surface mount in a 3-pin SOT-23 package.
Operates reliably between -55°C and 150°C operating temperatures.
Minimum DC current gain (hFE) of 30 ensures effective amplification.
Qualified to automotive standard AEC-Q101.

Product Description

The onsemi MMBT3904LT3G is a high-quality NPN bipolar transistor designed for both linear amplification and switching applications in electronic circuits. This transistor supports a maximum DC collector current of 900 mA and can withstand a collector-emitter voltage up to 40 V. It comes housed in a compact 3-pin SOT-23 surface-mount package, making it suitable for compact PCB designs and automated assembly.

This version of the MMBT3904 transistor fulfills requirements for automotive electronics as it is qualified to the stringent AEC-Q101 standard. It features a minimum DC current gain (hFE) of 30, enabling efficient current amplification across diverse applications.

Key electrical parameters include a maximum power dissipation of 300 mW and a maximum transition frequency (ft) of 100 MHz, which supports medium-frequency signal processing tasks. The transistor can operate reliably within a wide temperature range from -55°C to 150°C, ensuring durability in harsh industrial and automotive environments.

The package dimensions measure 3.04 mm in length, 2.64 mm in height, and 1.4 mm in width, suitable for surface mounting on printed circuit boards requiring high-density layouts. The transistor configuration is single NPN type with a maximum collector-base voltage (VCBO) of 60 V and a maximum emitter-base voltage (VEBO) of 6 V, making it versatile for various electronic circuit designs.

Typical use cases include general amplification, switching, automotive electronics, and industrial applications requiring compact, reliable bipolar transistors. This NPN transistor supports up to 900 mA collector current.

Collector-emitter voltage rating of 40 V. Power dissipation capacity is 300 mW. Transition frequency up to 100 MHz. Surface-mount 3-pin SOT-23 package. Operational temperature range from -55°C to 150°C. Minimum DC current gain of 30.

Automotive standard AEC-Q101 compliant. Compact dimensions ideal for PCB mounting. Manufactured in China with onsemi quality assurance. Explore the complete range of onsemi Bipolar Transistors at EnvMart for your electronic and automotive design needs.