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onsemi Silicon Junction Switching Diode, Single, 2 A, 1 kV, DO-41 Package MUR2100EG

Category Switching Diodes Brand onsemi Condition New

Specifications

Country of Origin India
Diameter 2.7mm
Brand onsemi
Height 5.2mm
Length 5.2mm
Model MUR2100EG
Width 2.7mm
Mount Type Through Hole
Maximum Operating Temperature 175°C
Package Type DO-41
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 35A
Maximum Forward Voltage Vf 2.2V
Peak Reverse Recovery Time trr 100ns
Maximum Forward Current If 2A
Maximum Peak Reverse Repetitive Voltage Vrrm 1kV

Key Features

  • Designed as a silicon junction switching diode optimized for high-speed switching applications.
  • Supports a maximum forward current of 2 amperes with low forward voltage drop up to 2.2 volts.
  • Features a peak reverse repetitive voltage of 1 kilovolt for reliable blocking capability.
  • Constructed with a through-hole mount type and 2-pin DO-41 package for easy PCB integration.
  • Peak reverse recovery time of 100 nanoseconds ensures efficient switching performance.
  • Operates reliably in temperatures ranging from -65°C to 175°C for industrial applications.
  • Maximum peak surge current rating of 35 amperes for transient fault tolerance.
  • Physical dimensions include length and height of 5.2 mm and diameter/width of 2.7 mm.

Product Description

onsemi MUR2100EG is a silicon junction switching diode designed for high-speed electronic switching and rectification applications. Packaged in the industry-standard DO-41 through-hole configuration, this diode enables convenient mounting and secure soldering on printed circuit boards. Rated for a maximum forward current of 2 A and a peak reverse voltage of 1 kV, the MUR2100EG diode effectively manages moderate power levels in electronic circuits.

The device features a peak reverse recovery time of only 100 nanoseconds, making it suitable for applications requiring rapid switching and minimal switching losses. Its maximum forward voltage drop of 2.2 volts ensures efficient conduction during operation.

Designed to withstand harsh environments, it operates within a broad temperature range of -65°C to 175°C, providing robust reliability in industrial and commercial electronic systems. The diode's peak non-repetitive surge current of 35 amperes offers protection against transient surges and spikes.

Physical attributes include a compact length and height of 5.2 mm each, with a diameter of 2.7 mm, fitting standard PCB layouts. Though it is not qualified for automotive standards, this diode remains widely applicable in power supply design, industrial controls, and discrete semiconductor applications.

Designed as a silicon junction switching diode optimized for high-speed switching applications. Supports a maximum forward current of 2 amperes with low forward voltage drop up to 2.2 volts. Features a peak reverse repetitive voltage of 1 kilovolt for reliable blocking capability.

Constructed with a through-hole mount type and 2-pin DO-41 package for easy PCB integration. Peak reverse recovery time of 100 nanoseconds ensures efficient switching performance. Operates reliably in temperatures ranging from -65°C to 175°C for industrial applications.

Maximum peak surge current rating of 35 amperes for transient fault tolerance. Physical dimensions include length and height of 5.2 mm and diameter/width of 2.7 mm. Non-automotive standard diode suited for general electronic component use.

Ideal for use in power conversion, rectification, and industrial electronic equipment.

This onsemi MUR2100EG diode is a dependable component for engineers and technicians engaged in designing and repairing industrial power electronics, switching power supplies, and general discrete semiconductor systems. Browse the Electronics & Electricals category at EnvMart for more semiconductor and diode options suited for various technical needs.

Explore more products in our Switching Diodes category.

onsemi Silicon Junction Switching Diode, Single, 2 A, 1 kV, DO-41 Package MUR2100EG
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Frequently Asked Questions

The MUR2100EG diode supports a maximum forward current of 2 amperes.

It features a peak reverse repetitive voltage of 1 kilovolt, providing reliable blocking capability.

The maximum forward voltage drop is 2.2 volts during operation.

The peak reverse recovery time is 100 nanoseconds, ensuring efficient switching performance.

This model has a length and height of 5.2 mm, with a diameter of 2.7 mm.

It operates reliably in temperatures ranging from -65°C to 175°C.

The maximum peak surge current rating is 35 amperes, providing transient fault tolerance.

It is constructed in a DO-41 package type, suitable for through-hole mounting.

This diode has a pin count of 2, allowing for easy integration into circuits.

The MUR2100EG is a single diode configuration, designed for various electronic applications.

The country of origin for this diode is India.

It is widely applicable in power supply design, industrial controls, and discrete semiconductor applications.

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