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STMicroelectronics MDmesh N-Channel MOSFET 21 A 500 V Enhancement 3-Pin TO-247 STW28NM50N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW28NM50N |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 21A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 158mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 50nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.3V |
Key Features
- The device has a very low maximum drain-source resistance of 158 mΩ ensuring efficient conduction.
- It features a typical gate charge of 50 nC at Vgs allowing for fast switching.
- Maximum power dissipation rating is 150 W suited for high power applications.
- Operating temperature ranges from -55°C to 150°C making it reliable under varied environments.
- Mount type is through-hole with a compact package size of 20.15mm height, 15.75mm length, and 5.15mm width.
- Maximum gate-source voltage is ±25 V providing robust gate control.
- Forward voltage is rated at 1.3 V lowering conduction losses.
- Channel type is N-channel in enhancement mode suitable for switching and amplification circuits.
Product Description
The STMicroelectronics STW28NM50N is an MDmesh N-Channel Enhancement Mode MOSFET specially engineered for demanding power electronic applications. This 3-pin TO-247 package transistor offers a high maximum drain current of 21 A and withstands drain-source voltages up to 500 V, making it ideal for power supply, motor control, and industrial switching applications.
Constructed with advanced MDmesh technology, the MOSFET achieves exceptionally low on-resistance of 158 mΩ, which enhances efficiency and reduces energy losses in high-current circuits. Its typical gate charge of 50 nC at Vgs ensures efficient and rapid switching, critical in high-frequency power conversion.
The device supports a maximum power dissipation of 150 W and operates reliably in temperature extremes from -55°C to 150°C, catering to robust industrial environments and automotive electronics that require durability and consistent performance.
Its through-hole mount TO-247 package facilitates easy integration into power boards and allows effective thermal management. The transistor’s maximum gate-source voltage rating of ±25 V protects the gate oxide and enhances device longevity.
Maximum continuous drain current of 21 A suitable for demanding power circuits. 500 V maximum drain-source voltage for high-voltage operations. Low drain-source resistance minimizes power losses. Wide operating temperature range for flexibility in use cases.
Compact TO-247 package enables efficient heat dissipation. N-channel enhancement mode ideal for efficient switching. High power dissipation capability enhances durability.
This STMicroelectronics MOSFET finds its applications in industrial machines, power supplies, motor drives, and electronic devices requiring efficient switching components. Engineers and designers benefit from the robustness and high-performance characteristics of the STW28NM50N for improved product designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 21 A, making it suitable for high-power applications.
This unit has a maximum drain-source voltage rating of 500 V, allowing it to operate effectively in high-voltage applications.
The typical gate charge at Vgs for this MOSFET is 50 nC, which facilitates fast switching capabilities.
It has a maximum power dissipation rating of 150 W, suitable for high power applications.
The dimensions of the TO-247 package are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
The maximum gate-source voltage for this model is ±25 V, which helps protect the gate oxide.
It operates reliably within a temperature range of -55°C to 150°C, making it suitable for various environments.
The maximum drain-source resistance is 158 mΩ, which ensures efficient conduction and minimizes power losses.
This model uses a through-hole mount type, facilitating easy integration into power boards.
This unit features an N-channel in enhancement mode, making it suitable for switching and amplification circuits.
This MOSFET is suitable for applications in power supplies, motor control, and industrial switching, among others.
The forward voltage rating for this model is 1.3 V, which helps in reducing conduction losses.
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