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STMicroelectronics MDmesh N-Channel Enhancement MOSFET, 600 V, 29 A, 210 W TO-247 STW34NM60N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW34NM60N |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 29A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 105mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 210W |
| Typical Gate Charge Qg @ Vgs | 84nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.6V |
Key Features
- Features MDmesh technology enhancing performance and efficiency.
- Designed with a 3-pin through-hole mount suitable for various electronic applications.
- Maximum drain-source resistance of 105 milliohms ensures low conduction losses.
- Operates reliably between -55°C and 150°C temperature range.
- Typical gate charge of 84 nC at rated gate voltage for efficient switching.
- Maximum gate-source voltage rating of ±25 V protects device integrity.
- Forward voltage drop of 1.6 V reduces power dissipation during conduction.
- Compact dimensions of 15.75 mm length, 5.15 mm width, and 20.15 mm height optimize board space usage.
Product Description
STMicroelectronics STW34NM60N is a high-performance MDmesh N-Channel MOSFET designed for power and switching applications. It features a maximum continuous drain current of 29 A and a drain-source voltage rating of 600 V with an enhancement mode channel, making it suitable for industrial, automotive, and power management use cases.
The device is housed in a robust TO-247 package with a through-hole mount and three pins, enabling secure connection and effective heat dissipation. It has a low maximum drain-source resistance of 105 milliohms, which helps in minimizing conduction losses and improving energy efficiency in circuits.
STW34NM60N operates efficiently within a broad temperature range from -55°C up to 150°C, making it reliable for use in harsh environmental conditions. The typical gate charge of 84 nC ensures swift switching capabilities, critical for high-frequency power conversion systems.
Its maximum gate-source voltage rating of ±25 V safeguards the MOSFET from overvoltage stress. A forward voltage drop of 1.6 V contributes to reduced power loss during operation, enhancing overall device performance.
With precise dimensions (length 15.75 mm, width 5.15 mm, height 20.15 mm), this MOSFET fits compact system designs while delivering substantial power of 210 watts maximum dissipation. This makes it ideal for use in industrial electronics, power supplies, motor controls, and other electronic power management applications.
Features MDmesh technology enhancing performance and efficiency. Designed with a 3-pin through-hole mount suitable for various electronic applications. Maximum drain-source resistance of 105 milliohms ensures low conduction losses.
Operates reliably between -55°C and 150°C temperature range. Typical gate charge of 84 nC at rated gate voltage for efficient switching. Maximum gate-source voltage rating of ±25 V protects device integrity. Forward voltage drop of 1.6 V reduces power dissipation during conduction.
Compact dimensions of 15.75 mm length, 5.15 mm width, and 20.15 mm height optimize board space usage. Explore the full range of high-performance MOSFETs and discrete semiconductors at EnvMart for industrial, automotive, and power electronics design requirements.
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Frequently Asked Questions
The maximum continuous drain current for the STW34NM60N is 29 A.
This model has a maximum drain-source voltage rating of 600 V.
The maximum power dissipation for the STW34NM60N is 210 W.
The typical gate charge at rated gate voltage for this unit is 84 nC.
The dimensions of the TO-247 package are 15.75 mm in length, 5.15 mm in width, and 20.15 mm in height.
The maximum gate-source voltage rating for this model is ±25 V.
The maximum drain-source resistance of the STW34NM60N is 105 milliohms.
It can operate reliably within a temperature range of -55°C to 150°C.
This model uses a through-hole mounting type.
The forward voltage drop during conduction for this unit is 1.6 V.
The STW34NM60N features an N-channel type.
This MOSFET belongs to the MDmesh series.
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