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onsemi Small Signal PNP Transistor, Maximum DC Collector Current 500 mA, Maximum Collector Emitter Voltage 80 V MMBTA56LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model MMBTA56LT1G
Width 1.4mm
Mount Type Surface
Series MMBTA56L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -80V
Minimum DC Current Gain hFE 100
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 4V
Maximum Collector Base Voltage VCBO 80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single
Maximum Transition Frequency ft 50MHz

Key Features

  • This transistor features a maximum power dissipation of 300 mW.
  • It has a minimum DC current gain (hFE) of 100 ensuring efficient amplification.
  • Operates across a temperature range from -55°C to 150°C.
  • Includes automotive standard AEC-Q101 qualification for reliable automotive applications.
  • Compact package dimensions of 3.04 mm length, 1.4 mm width, and 1.11 mm height.
  • Maximum transition frequency (ft) is 50 MHz, suitable for high-frequency circuits.
  • The transistor polarity is PNP and it is designed for single transistor configuration.
  • Pin count is 3 for easy implementation on PCBs.

Product Description

onsemi MMBTA56LT1G is a compact, small signal PNP transistor designed for surface mounting in electronic circuits. It delivers a maximum DC collector current of 500 mA and withstands a maximum collector emitter voltage of 80 V, making it suitable for medium-power applications requiring reliable switching and amplification.

This transistor is housed in a 3-Pin SOT-23 package with dimensions of 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height, allowing for space-saving design in compact printed circuit boards. It offers a maximum power dissipation rating of 300 mW, enabling effective operation under moderate load conditions.

The device features a minimum DC current gain (hFE) of 100 which ensures efficient amplification performance in signal processing and amplification tasks. It operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial and automotive environments.

Additionally, the MMBTA56LT1G transistor meets the automotive standard AEC-Q101, certifying it for automotive system applications requiring durability and quality compliance. Its maximum transition frequency of 50 MHz supports high-frequency switching applications, including communication and control circuits.

The transistor is designed for single transistor configurations with a PNP polarity and three pins which facilitates easy mounting and soldering on modern PCBs. It is highly suitable for industrial, automotive, and electronic manufacturing sectors where small signal transistors of reliable performance are required.

This transistor features a maximum power dissipation of 300 mW. It has a minimum DC current gain (hFE) of 100 ensuring efficient amplification. Operates across a temperature range from -55°C to 150°C. Includes automotive standard AEC-Q101 qualification for reliable automotive applications.

Compact package dimensions of 3.04 mm length, 1.4 mm width, and 1.11 mm height. Maximum transition frequency (ft) is 50 MHz, suitable for high-frequency circuits. The transistor polarity is PNP and it is designed for single transistor configuration.

Pin count is 3 for easy implementation on PCBs.

This onsemi bipolar transistor is an excellent component choice for various industrial, electronic, automotive, and manufacturing applications, offering dependable performance in signal switching and amplification roles. Browse EnvMart for a wide range of similar semiconductors and transistors for your projects and production needs.

Explore more products in our Bipolar Transistors category.

onsemi Small Signal PNP Transistor, Maximum DC Collector Current 500 mA, Maximum Collector Emitter Voltage 80 V MMBTA56LT1G
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Frequently Asked Questions

The maximum DC collector current for this model is 500 mA.

It can withstand a maximum collector-emitter voltage of 80 V.

The minimum DC current gain (hFE) is 100, ensuring efficient amplification.

It operates across a temperature range from -55°C to 150°C.

This model has dimensions of 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height.

The maximum power dissipation rating is 300 mW.

It is housed in a SOT-23 package type.

The maximum transition frequency is 50 MHz, suitable for high-frequency applications.

This transistor has a pin count of 3, facilitating easy implementation on PCBs.

It meets the automotive standard AEC-Q101, certifying its reliability for automotive applications.

The transistor polarity is PNP, designed for single transistor configurations.

The MMBTA56LT1G is designed for surface mounting.

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