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onsemi Small Signal PNP Transistor 1 A 160 V 3-Pin TO-92 KSA1013YTA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 21.9mm
Length 5.1mm
Model KSA1013YTA
Width 4.1mm
Mount Type Through Hole
Series KSA1013
Maximum Operating Temperature 150°C
Package Type TO-92
Pin Count 3
Maximum Collector Emitter Voltage Vceo -160V
Minimum DC Current Gain hFE 60
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -160V
Maximum Power Dissipation Pd 900mW
Maximum DC Collector Current Idc -1A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • The transistor has a maximum power dissipation of 900 mW allowing for moderate heat dissipation.
  • It offers a transition frequency of 1 MHz suitable for general purpose switching and amplification.
  • The device has a minimum DC current gain (hFE) of 60 ensuring adequate gain performance.
  • The maximum operating temperature reaches up to 150°C, making it suitable for various industrial environments.
  • Compact dimensions with length 5.1 mm, width 4.1 mm, and height 21.9 mm contribute to space-efficient PCB design.
  • Designed with single transistor configuration and PNP polarity for standard bipolar transistor applications.
  • Ensures reliable through-hole mount with TO-92 package style.
  • The transistor withstands maximum collector base and emitter base voltages of 160 V and 6 V respectively.

Product Description

onsemi KSA1013YTA is a small signal PNP bipolar junction transistor designed for versatile electronic component applications with a maximum dc collector current rating of 1 ampere and collector-emitter voltage of 160 volts. This transistor comes in a 3-pin TO-92 through-hole package, providing ease of mounting and stable mechanical fitment in printed circuit boards.

With a maximum power dissipation of 900 milliwatts, the KSA1013YTA is efficient for moderate power general-purpose switching and amplification tasks in consumer, industrial, and commercial electronic circuits. The device operates up to a maximum temperature of 150 degrees Celsius, ensuring reliable operation under varying thermal conditions.

The transistor features a minimum DC current gain (hFE) of 60 and a transition frequency of 1 MHz, which is adequate for typical signal amplification and switching functions. Electrical limits also include a maximum collector-base voltage and emitter-base voltage of 160 V and 6 V respectively, suitable for a range of control and interface circuits.

Its compact dimensions contribute to flexible and space-saving PCB layouts, measuring approximately 5.1 mm in length, 4.1 mm in width, and 21.9 mm in height. The TO-92 package is a well-known standard offering simple mounting and excellent reliability in low to moderate power electronic designs.

This transistor is not designed according to automotive standards but is commonly used in applications including electronic instrumentation, industrial controls, and small signal amplification in various circuitry.

The transistor has a maximum power dissipation of 900 mW allowing for moderate heat dissipation. It offers a transition frequency of 1 MHz suitable for general purpose switching and amplification. The device has a minimum DC current gain (hFE) of 60 ensuring adequate gain performance.

The maximum operating temperature reaches up to 150°C, making it suitable for various industrial environments. Compact dimensions with length 5.1 mm, width 4.1 mm, and height 21.9 mm contribute to space-efficient PCB design.

Designed with single transistor configuration and PNP polarity for standard bipolar transistor applications. Ensures reliable through-hole mount with TO-92 package style. The transistor withstands maximum collector base and emitter base voltages of 160 V and 6 V respectively.

Non-automotive standard transistor suitable for diverse electronic circuit applications. Explore more from onsemi and related bipolar transistor products at EnvMart for your industrial, manufacturing, and electronics needs.

Explore more products in our Bipolar Transistors category.

onsemi Small Signal PNP Transistor 1 A 160 V 3-Pin TO-92 KSA1013YTA
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this model is 160 V.

It has a maximum power dissipation of 900 mW, allowing for moderate heat dissipation during operation.

The minimum DC current gain (hFE) is 60, ensuring adequate gain performance for various applications.

The maximum operating temperature reaches up to 150°C, making it suitable for various industrial environments.

This transistor measures approximately 5.1 mm in length, 4.1 mm in width, and 21.9 mm in height.

It comes in a 3-pin TO-92 through-hole package, which facilitates easy mounting on printed circuit boards.

The transition frequency is 1 MHz, suitable for general-purpose switching and amplification tasks.

The maximum emitter-base voltage (VEBO) is 6 V.

This model is a PNP transistor, designed for standard bipolar transistor applications.

The maximum DC collector current (Idc) rating is 1 A.

It is commonly used in electronic instrumentation, industrial controls, and small signal amplification in various circuitry.

The KSA1013YTA is designed for through-hole mounting, ensuring a stable mechanical fitment in PCB designs.

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