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onsemi Small Signal PNP Transistor 600 mA 40 V TO-92 3-Pin Through Hole 2N4403BU

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 18.03mm
Length 5.2mm
Model 2N4403BU
Width 4.19mm
Mount Type Through Hole
Series 2N4403
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -40V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single
Maximum Transition Frequency ft 200MHz

Key Features

  • Supports a maximum DC collector current of 600 mA.
  • Rated for a maximum collector emitter voltage of 40 V.
  • Operates within a temperature range of -55°C to 150°C.
  • Comes in a TO-92 package type with through hole mount.
  • Has a minimum DC current gain (hFE) of 30.
  • Maximum power dissipation rating of 625 mW to ensure reliable performance.
  • Features PNP transistor polarity suitable for small signal amplification.
  • Maximum transition frequency of 200 MHz for high frequency applications.

Product Description

onsemi 2N4403BU is a reliable Small Signal PNP Bipolar Junction Transistor (BJT) designed for general purpose amplification and switching applications. Featuring a 600 mA maximum collector current and 40 V collector emitter voltage rating, this transistor excels in low power signal amplification within electronic circuits.

The device is housed in a compact TO-92 package that supports through hole mounting, providing excellent thermal performance and ease of PCB assembly. Its transistor configuration as a single PNP type enables versatile circuit design and integration.

With a minimum DC current gain (hFE) of 30 and a maximum transition frequency (ft) of 200 MHz, the 2N4403BU supports high-frequency operations suitable for audio and RF amplification. It has a maximum power dissipation of 625 mW ensuring thermal stability under typical operating conditions.

The transistor supports operating temperatures ranging from -55°C to 150°C, making it suitable for industrial, commercial, and consumer electronic environments. Its compact physical dimensions (5.2 mm length, 4.19 mm width, 18.03 mm height) allow for space-saving circuit layouts.

Maximum DC collector current of 600 mA ensures adequate current handling for signal switching and amplification. Suitable for use in low to medium power amplification circuits and switching applications. Compact TO-92 package provides reliable physical and thermal characteristics.

Through hole mounting type simplifies PCB assembly and replacement. Wide operating temperature range supports use in a variety of environments. High transition frequency supports medium to high frequency circuits. This transistor is ideal for applications in electronic component manufacturing, laboratory testing, HVAC controls, and industrial control systems.

Not compliant with automotive standards, intended for general electronic design use.

Explore the comprehensive range of onsemi Bipolar Transistors and related semiconductor components on EnvMart to fulfill your electronic design requirements with quality and reliability.

onsemi Small Signal PNP Transistor 600 mA 40 V TO-92 3-Pin Through Hole 2N4403BU
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Frequently Asked Questions

The maximum DC collector current for this model is 600 mA.

It has a maximum collector-emitter voltage rating of 40 V.

This transistor operates within a temperature range of -55°C to 150°C.

The 2N4403BU comes in a TO-92 package type with through hole mounting.

It has a minimum DC current gain (hFE) of 30.

The maximum power dissipation rating is 625 mW.

The maximum transition frequency (ft) is 200 MHz, suitable for high-frequency applications.

The dimensions are 5.2 mm in length, 4.19 mm in width, and 18.03 mm in height.

This model uses a single PNP transistor configuration.

It is suitable for general-purpose amplification and switching applications in electronic circuits.

The maximum emitter-base voltage (VEBO) is -5 V.

The country of origin for this model is India.

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