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onsemi Small Signal NPN Transistor 200 mA 40 V 3-Pin TO-92 2N3904TFR

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 20.95mm
Length 5.2mm
Model 2N3904TFR
Width 4.19mm
Mount Type Through Hole
Series 2N3904
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc 200mA
Transistor Configuration Single
Maximum Transition Frequency ft 300MHz
onsemi 2N3904TAR NPN Transistor, 200 mA, 40 V, 3-Pin TO-92Brand onsemi

Key Features

  • This transistor has a maximum DC collector current of 200 mA for moderate power applications.
  • The maximum collector-emitter voltage is rated at 40 V to handle typical voltage levels.
  • The package type is TO-92 with through-hole mount, suitable for prototyping and small circuits.
  • Maximum power dissipation is 625 mW allowing moderate thermal loads.
  • Device features a transition frequency of 300 MHz for high-speed switching tasks.
  • It has a minimum DC current gain (hFE) of 40 for amplification purposes.
  • Pin count is 3, with transistor configured as a single NPN polarity device.
  • Operating temperature ranges from -55°C to 150°C, enabling use in varied environments.

Product Description

onsemi 2N3904TFR is a Small Signal NPN Bipolar Junction Transistor designed to operate with a maximum collector current of 200 mA and withstand a collector-emitter voltage of 40 V. It comes in a 3-pin TO-92 package configured for through-hole mounting, offering easy integration into electronic circuit boards for industrial and laboratory uses.

Featuring a maximum power dissipation of 625 mW and a transition frequency of 300 MHz, this transistor is suitable for medium-speed switching, amplification, and general-purpose low power applications in fields such as electronic testing, manufacturing, and automotive circuits.

The device’s minimum DC current gain (hFE) of 40 ensures reliable amplification performance. Operating temperature ranges from -55°C to 150°C allow utilization in a variety of environments, including demanding industrial conditions. Its physical dimensions - 5.2 mm length, 4.19 mm width, and 20.95 mm height - make it compact and versatile for space-constrained designs.

The NPN transistor's single configuration and through-hole mounting style simplify prototype assembly and provide stable electrical performance. Typical uses include switching circuits, signal amplification, and general electronic component projects where moderate voltage and current handling are essential.

The product does not carry specific automotive or industry certifications but complies with standard quality manufacturing practices by onsemi. It is widely adopted for educational, industrial, and hobbyist applications due to its proven reliability.

This transistor has a maximum DC collector current of 200 mA for moderate power applications. The maximum collector-emitter voltage is rated at 40 V to handle typical voltage levels. The package type is TO-92 with through-hole mount, suitable for prototyping and small circuits.

Maximum power dissipation is 625 mW allowing moderate thermal loads. Device features a transition frequency of 300 MHz for high-speed switching tasks. It has a minimum DC current gain (hFE) of 40 for amplification purposes.

Pin count is 3, with transistor configured as a single NPN polarity device. Operating temperature ranges from -55°C to 150°C, enabling use in varied environments. Dimensions are compact: length 5.2 mm, width 4.19 mm, height 20.95 mm aiding circuit board integration.

Commonly used for amplification and switching in industrial, electronic prototype, and educational applications. Explore more semiconductor and transistor products from onsemi at EnvMart for diverse industrial and electronic component requirements.

Explore more products in our Bipolar Transistors category.

onsemi Small Signal NPN Transistor 200 mA 40 V 3-Pin TO-92 2N3904TFR
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Frequently Asked Questions

The maximum DC collector current of this model is 200 mA, making it suitable for moderate power applications.

The maximum collector-emitter voltage is rated at 40 V, allowing it to handle typical voltage levels in various applications.

It comes in a TO-92 package type with a through-hole mounting style, facilitating easy integration into electronic circuit boards.

The maximum power dissipation for this transistor is 625 mW, which allows it to manage moderate thermal loads effectively.

This transistor features a transition frequency of 300 MHz, suitable for high-speed switching tasks.

The minimum DC current gain (hFE) is 40, which ensures reliable amplification performance in various applications.

The dimensions are 5.2 mm in length, 4.19 mm in width, and 20.95 mm in height, making it compact for space-constrained designs.

The operating temperature range is from -55°C to 150°C, enabling its use in varied environments, including industrial settings.

It is configured as a single NPN polarity device, which is common for various electronic applications.

This transistor is commonly used for amplification, switching circuits, and general electronic component projects.

The maximum emitter-base voltage (VEBO) is rated at 6 V, ensuring it operates within safe limits for various applications.

The maximum collector-base voltage (VCBO) is rated at 60 V, providing additional versatility in circuit design.

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