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onsemi General Purpose PNP Transistor 800 mA, 40 V DC, 3-Pin SOT-23 MMBT3906LT3G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 0.4mm
Length 3.04mm
Model MMBT3906LT3G
Width 2.64mm
Mount Type Surface
Series MMBT3906L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -40V dc
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO 40V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc -800mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Supports a maximum power dissipation of 225 mW for efficient operation.
  • Designed with a maximum transition frequency of 100 MHz for high-speed switching.
  • Stable operation across a temperature range from -55°C to 150°C.
  • Single transistor configuration ideal for general purpose amplifier and switching applications.
  • Manufactured in China following strict quality standards.

Product Description

onsemi MMBT3906LT3G is a general purpose PNP bipolar transistor designed for reliable switching and amplification in electronic circuits. Featuring a maximum DC collector current of 800 mA and a collector-emitter voltage rating of 40 V DC, it is suitable for a wide range of low power electronic applications.

This transistor utilizes a compact 3-pin SOT-23 surface mount package making it ideal for space-constrained PCB designs. The device supports a maximum power dissipation of 225 mW ensuring efficient thermal performance during operation.

With a maximum transition frequency of 100 MHz, the MMBT3906LT3G is capable of high speed switching and signal amplification, essential for communication and signal processing circuits.

Engineered to operate reliably over a broad temperature range from -55°C to 150°C, this transistor meets rigorous industrial and commercial application requirements.

The small form factor dimensions of 3.04 mm length, 2.64 mm width, and 0.4 mm height facilitate integration into compact assemblies in consumer electronics, instrumentation, and automotive electronics.

Supports a maximum power dissipation of 225 mW for efficient operation. Designed with a maximum transition frequency of 100 MHz for high-speed switching. Stable operation across a temperature range from -55°C to 150°C. Compact dimensions: 3.04 mm length, 2.64 mm width, and 0.4 mm height.

Single transistor configuration ideal for general purpose amplifier and switching applications. Manufactured in China following strict quality standards. Commonly used in industrial, commercial, automotive, and laboratory electronic circuit assemblies, this transistor is ideal for amplification, switching, and signal processing.

Choose onsemi MMBT3906LT3G for dependable, high-performance PNP transistor solutions. Explore more semiconductor components and bipolars in our extensive EnvMart catalog.

Explore more products in our Bipolar Transistors category.

onsemi General Purpose PNP Transistor 800 mA, 40 V DC, 3-Pin SOT-23 MMBT3906LT3G
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Frequently Asked Questions

The maximum DC collector current for this transistor is 800 mA.

It supports a maximum power dissipation of 225 mW for efficient operation.

This transistor has dimensions of 3.04 mm in length, 2.64 mm in width, and 0.4 mm in height.

The maximum transition frequency is 100 MHz, suitable for high-speed switching applications.

It operates reliably across a temperature range from -55°C to 150°C.

This model is packaged in a compact 3-pin SOT-23 surface mount configuration.

It features a single transistor configuration, making it suitable for general purpose applications.

The maximum collector-emitter voltage rating is 40 V DC.

This transistor is ideal for general purpose amplifier and switching applications in various electronic circuits.

The maximum emitter-base voltage is -5 V.

The minimum DC current gain (hFE) is 30.

It is manufactured in China following strict quality standards.

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