onsemi Silicon Junction Switching Diode 2 A 2-Pin DO-214AA 400 V MURS360BT3G

onsemi MURS360BT3G is a Silicon Junction Switching Diode designed for electronic and power applications requiring moderate current handling and high voltage blocking capability. With a maximum forward current of 2 amperes and a peak repetitive reverse voltage of 400 volts, this 2-pin diode housed in a DO-214AA package is ideal for surface mount technology circuits.

The diode features a peak reverse recovery time of 75 nanoseconds which makes it suitable for high-speed switching applications in power supplies, rectifiers, and protection circuits.

It operates over a wide temperature range from -65°C to 175°C, ensuring robustness in industrial and commercial electronic environments. Key physical dimensions of the component are a length of 4.6 mm, width of 3.95 mm, and height of 2.27 mm, allowing for efficient PCB layout in compact designs.

This diode has a silicon junction configuration optimized for switching. Maximum peak forward voltage of 1.25 V supports low power dissipation. Surface mount design facilitates automated assembly processes. Peak non-repetitive forward surge current of 100 A ensures resilience against transient conditions.

Non-compliant with automotive standards, intended mainly for standard industrial use. Compact DO-214AA packaging suits modern electronic component standards.

This component is widely employed in industrial electronics, laboratory equipment, power conversion systems, and manufacturing devices requiring efficient rectification and voltage control.

For applications demanding Silicon Junction Switching Diodes with reliable switching performance and moderate current rating, onsemi MURS360BT3G provides a solid choice. EnvMart offers detailed catalogs and related semiconductor components for comprehensive industrial solutions.